NCE4606

NCE4606 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) 30 - 30 0.018 at VGS = 10 V 8e 0.020 at VGS = 8 V 8e 6.2 e 0.024 at VGS = 4.5 V 8 0.032 at VGS = - 10 V - 8e e 0.034 at VGS = - 8 V -8 0.040 at VGS = - 4.5 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 18.5 • Motor Drive • Mobile Power Bank D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 8e - 8e 6.8 - 6.8 6.8b, c - 6.6b, c b, c - 5.3b, c - 40 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Source-Drain Current Diode Current TC = 25 °C TA = 25 °C Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation 5.4 40 IDM Pulsed Drain Current (10 µs Pulse Width) L = 0.1 mH 2.6 - 2.6 ISM - 1.6b, c - 40 IAS 10 - 20 EAS 5 20 TC = 25 °C 3.1 3.2 TC = 70 °C 2 2.1 2b, c 2b, c TA = 25 °C PD TA = 70 °C 1.28b, c TJ, Tstg Operating Junction and Storage Temperature Range V 1.6b, c 40 IS Unit A mJ W 1.28b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typ. Max. t ≤ 10 s RthJA 50 Steady State RthJF 30 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. E-mail：China@VBsemi TEL:86-755-83251052 P-Channel Typ. Max. 62.5 47 62.5 40 29 38 Unit °C/W NCE4606 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Min. Test Conditions Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 ID = 250 µA N-Ch V 40 ID = - 250 µA P-Ch - 34 ID = 250 µA N-Ch - 4.1 5 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.0 VDS = VGS, ID = - 250 µA P-Ch - 1.0 VDS = 0 V, VGS = ± 12 V N-Ch ± 100 VDS = 0 V, VGS = ± 12 V P-Ch ± 100 2.0 - 2.0 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 6.8 A N-Ch V nA µA A 0.018 VGS = - 10 V, ID = - 8 A P-Ch 0.040 VGS = 8 V, ID = 6.7 A N-Ch 0.020 VGS = - 8 V, ID = - 6.5 A P-Ch 0.044 VGS = 4.5 V, ID = 6.6 A N-Ch 0.024 VGS = - 4.5 V, ID = - 5 A P-Ch 0.050 VDS = 15 V, ID = 6.8 A N-Ch 27 VDS = - 15 V, ID = - 6.7 A P-Ch 25 N-Ch 510 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance E-mail：China@VBsemi TEL:86-755-83251052 Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz Coss Crss Qg P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz Rg 620 N-Ch 95 P-Ch 115 N-Ch 33 P-Ch 57 pF VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 6 10 VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 41.5 63 N-Ch 5.8 7 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Ch 16 22 N-Ch 1.6 P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A P-Ch 4.3 N-Ch 1.4 Qgs Qgd P-Ch 7 P-Ch f = 1 MHz nC N-Ch 0.3 1.1 2.3 P-Ch 1.2 5.7 9.6 Ω NCE4606 www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch 4 8 P-Ch 10 16 N-Ch 10 17 P-Ch 9 15 N-Ch 16 22 P-Ch 23 26 N-Ch 5 9 P-Ch 10 16 N-Ch 10 16 35 P-Ch 26 N-Ch 11 20 P-Ch 16 26 N-Ch 13 22 P-Ch 16 26 N-Ch 5 9 P-Ch 16 26 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD N-Ch 2.6 P-Ch - 2.6 N-Ch 40 P-Ch A - 40 IS = 5.4 A N-Ch 0.81 1.2 IS = - 2 A P-Ch - 0.77 - 1.2 N-Ch 12 25 P-Ch 31 57 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 10 17 P-Ch 29 47 Reverse Recovery Fall Time ta P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 10 P-Ch 13 Reverse Recovery Rise Time tb N-Ch 7 P-Ch 23 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 NCE4606 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 30 VGS = 3 V 20 6 TC = 25 °C 4 10 2 TC = 125 °C 0 TC = - 55 °C 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0.6 1.2 1.8 2.4 VGS - Gate-to-Source Voltage (V) 0 Output Characteristics 3 Transfer Characteristics 1000 0.030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 800 0.025 VGS = 4.5 V 0.020 VGS = 8 V 600 Ciss 400 VGS = 10 V 0.015 200 Crss Coss 0 0.010 0 10 20 30 0 40 10 20 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 6.8 A 8 RDS(on) - On-Resistance (Normalized) ID = 6.8 A VGS - Gate-to-Source Voltage (V) 40 VDS = 32 V 6 VDS = 20 V VDS = 10 V 4 2 0 0 3 6 9 12 15 1.6 VGS = 10 V; 4.5 V 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 NCE4606 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 6.8 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.04 TJ = 125 °C 0.03 TJ = 25 °C 0.02 0.01 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 60 1.9 48 Power (W) VGS(th) (V) 1.6 ID = 250 μA 1.3 36 24 1 12 0.7 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 100 Limited by RDS(on)* 10 ID - Drain Current (A) 1 Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 μs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 0.1 Time (s) 10 NCE4606 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.25 1.0 Power (W) Power (W) 3 2 0.75 0.50 1 0.25 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 NCE4606 www.VBsemi.tw N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 NCE4606 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 V GS = 3 V 6 4 T C = 25 °C 8 2 T C = 125 °C 0 0.0 T C = - 55 °C V GS = 2 V 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 2.5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 1000 0.090 VGS = 4.5 V 0.050 VGS = 8 V VGS = 10 V 0.030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 800 0.070 600 Ciss 400 200 Coss Crss 0 0.010 0 10 20 ID - Drain Current (A) 30 40 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 8 A RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 40 8 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 2 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 36 45 1.6 V GS = 10 V 1.4 V GS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 On-Resistance vs. Junction Temperature 150 NCE4606 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 100 ID = 8 A 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 0.1 T J = 25 °C 0.09 0.06 T J = 125 °C 0.03 0.01 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 1 3 2 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 40 ID = 250 μA ID = 5 mA 0.2 Power (W) VGS(th) Variance (V) 0.5 30 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 TJ - Temperature (°C) 0.01 0.1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) * ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 100 1 10 NCE4606 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) 125 Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 NCE4606 www.VBsemi.tw P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 NCE4606 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 0.101 mm NCE4606 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) NCE4606 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052