NTD25P03LG
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P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.033 at VGS = - 10 V
- 26
0.046 at V GS = - 4.5 V
- 21
VDS (V)
- 30
•
•
•
•
Qg (Typ.)
19 nC
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
S
TO-252
G
G
D
S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 30
± 20
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.2a, b
- 20
20
25
20
2.7a, b
1.7a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 26
- 21
- 12.9a, b
- 9.6a, b
- 112
- 4.1
IDM
Pulsed Drain Current
Unit
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
46
25
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
- 34
mV/
°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
tr
- 30
0.043
VGS = - 4.5 V, ID = - 8 A
0.046
0.052
VDS = - 10 V, ID = - 10 A
28
1350
VDS = - 15 V, VGS = 0 V, f = 1 MHz
255
pF
190
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
27
43
19
25
6
nC
12
f = 1 MHz
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
0.5
2.2
4.4
13
25
12
24
70
tf
9
18
td(on)
48
80
92
160
tr
Ω
S
40
td(off)
µA
A
0.033
td(on)
td(off)
5.3
- 1.0
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
34
60
19
35
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.1
- 60
IS = - 3 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
27
45
ns
16
27
nC
12
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
8
VGS = 10 thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
12
6
TC = 125 °C
4
TC = 25 °C
2
TC = - 55 °C
VGS = 3 V
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
20
25
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.12
2000
0.10
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.08
VGS = 4.5 V
0.06
0.04
1200
800
Coss
400
Crss
VGS = 10 V
0.02
0
0
10
20
30
40
50
60
0
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
VDS = 10 V
ID = 10 A
8
1.4
VDS = 15 V
6
4
VDS = 20 V
2
0
0
12
24
36
Qg - Total Gate Charge (nC)
Gate Charge
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VGS = - 4.5 V
ID = - 10 A
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
5
48
60
VGS = - 10 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
NTD25P03LG
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
ID = 10 A
TJ = 150 °C
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
170
ID = 250 µA
136
0.4
Power (W)
V GS(th) Variance (V)
0.6
ID = 5 mA
0.2
102
68
0.0
34
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
17.0
ID - Drain Current (A)
13.6
10.2
6.8
3.4
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6.0
2.0
4.8
1.6
Power (W)
Power (W)
Current Derating*
3.6
2.4
1.2
0.8
0.4
1.2
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM -- TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
4. Surface Mounted
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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TO-252AA CASE OUTLINE
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
Note
• Dimension L3 is for reference only.
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RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
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representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
the product.(www.VBsemi.tw)
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any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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