SI2318DS-T1-GE3

SI2318DS-T1-GE3 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 6.5 0.033 at VGS = 4.5 V 6.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.5 nC APPLICATIONS • DC/DC Converter D TO-236 (SOT-23) G 1 3 S G D 2 S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current Limit 30 ± 20 6.5a 6.0 5.3 5.0 25 1.4 ID IDM IS Unit V A 0.9b, c 1.7 1.1 PD 1.1b, c 0.7b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter t≤5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W 服务热线：400-655-8788 1 SI2318DS-T1-GE3 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 31 mV/°C -5 0.7 1.1 2.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 10 µA A VGS = 10 V, ID = 3.2 A 0.030 VGS = 4.5 V, ID = 2.8 A 0.033 VDS = 15 V, ID = 4.8 A 11 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 335 VDS = 15 V, VGS = 0 V, f = 1 MHz 45 VDS = 15 V, VGS = 10 V, ID = 3.4 A 4.5 6.7 2.1 3.2 17 0.85 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 0.8 4.4 8.8 12 20 50 75 12 20 tf 22 35 td(on) 5 10 12 20 10 15 5 10 td(off) tr td(off) nC 0.65 f = 1 MHz td(on) tr pF VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.4 15 IS = 2.7 A, VGS = 0 V IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 10 20 ns 5 10 nC 6 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 SI2318DS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 15 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 3 V 3 TC = - 55 °C 2 TC = 25 °C 1 3 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 3.0 3.5 300 Ciss 250 0.05 0.04 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 Transfer Characteristics 0.10 VGS = 4.5 V 0.03 VGS = 10 V 200 150 100 Coss 0.02 50 Crss 0 0.00 0 3 6 9 12 0 15 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.6 1.5 ID = 3.4 A ID = 3.2 A VGS = 10 V 8 1.4 VDS = 7.5 V 6 VDS = 24 V 4 VDS = 15 V 2 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.0 VGS - Gate-to-Source Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge 4 5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 SI2318DS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.14 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.2 A 10 TJ = 150 °C TJ = 25 °C 1 0.12 0.10 TJ = 125 °C 0.08 0.06 TJ = 25 °C 0.04 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 10 25 2.2 20 Power (W) VGS(th) (V) 2.0 ID = 250 µA 1.8 15 10 1.6 5 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 SI2318DS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 2.0 1.5 Package Limited 4 Power (W I D - Drain Current (A) 5 3 1.0 0.5 2 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 SI2318DS-T1-GE3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot . 服务热线：400-655-8788 6 SI2318DS-T1-GE3 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 7 SI2318DS-T1-GE3 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 8 服务热线：400-655-8788  SI2318DS-T1-GE3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.