VB1240X

VB1240X www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, g 0.014 at VGS = 4.5V 8 0.018 at VGS = 2.5V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 9nC D (SOT-23) G 1 G 3 S D 2 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit 20 ± 12 8a, g 5.5g 6 b, c ID Unit V 3.5b, c 30 g 14 11.25 3a, g 1.5b, c 3.2 1.8 2.2b, c 1.0b, c - 55 to 150 260 IDM IAS EAS IS PD TJ, Tstg A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.6 Maximum 36 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. g. Package limited. 1 VB1240X www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 22 ID = 250 µA mV/°C - 5.0 VGS(th) VDS = VGS , ID = 250 µA 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 0.5 12 µA A VGS = 4.5V,ID= 10 A 0.014 VGS = 2.5V , ID = 7 A 0.018 VDS = 10 V, ID = 10 A 26 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 865 VDS = 10 V, VGS = 0 V, f = 1 MHz td(off) pF 131 VDS = 10 V, VGS = 10 V, ID = 10 A 15 23 10 nC 2.5 VDS = 15 V, VGS = 4.5 V, ID = 10 A 2.3 f = 1 MHz td(on) tr 316 VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.9 1.8 15 30 11 22 16 30 tf 8 16 td(on) 10 20 tr td(off) VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf 8 16 16 30 7 14 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 8 A 30 IS = 3 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 0.77 1.2 V 14 28 ns 4.5 9 nC 5.5 8.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VB1240X www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 40 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 VGS = 2 V 6 4 TC = 25 °C 2 8 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 VDS - Drain-to-Source Voltage (V) 4 5 Transfer Characteristics 0.035 1200 0.030 960 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.025 VGS = 2.5 V 0.020 0.015 2 Ciss 720 480 Coss 240 VGS = 4.5 V Crss 0.010 0 0 8 16 24 32 40 0 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.7 ID = 10 A ID = 10 A 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 15 V 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 10 0 0.0 4 1.3 VGS = 4.5 V 1.1 VGS = 2.5 V 0.9 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge 12.8 16.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VB1240X www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.05 I S - Source Current (A) R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.01 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.5 120 0.2 96 - 0.1 ID = 5 mA - 0.4 10 72 48 ID = 250 µA - 0.7 - 1.0 - 50 24 - 25 0 25 50 75 100 125 150 0 0.001 0.01 1 Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* 10 I D - Drain Current (A) 0.1 Time (s) TJ - Temperature (°C) Threshold Voltage 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 4 Source-Drain Diode Forward Voltage Power (W) VGS(th) Variance (V) 0.001 0.0 0.04 10 VB1240X www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 48 I D - Drain Current (A) 32 24 Package Limited 16 8 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 25 2.0 20 0 1.6 15 1.2 Power (W) Power (W) Current Derating* 10 5 0.8 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VB1240X www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 81 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 10 VB1240X www.VBsemi.com SOT-23 : 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 7 VB1240X www.VBsemi.com 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) 8 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 VB1240X Disclaimer www.VBsemi.com All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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