VB2103K

VB2103K www.VBsemi.com P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.50 at VGS = - 10 V - 1.5 0.56 at VGS = - 6.0 V - 1.4 Qg (Typ.) 7.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Conduction)a, b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa, b IS L = 1.0 mH TA = 25 °C TA = 70 °C - 1.5 - 1.4 - 1.55 - 3.0 - 1.0 IAS 4.5 1.01 mJ 2.0 0.85 1.0 0.58 TJ, Tstg Operating Junction and Storage Temperature Range A - 1.4 EAS PD V - 1.65 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. 服务热线：400-655-8788 1 VB2103K www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 100 VGS(th) VDS = VGS, ID = - 250 µA - 1..0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage VDS ≤ - 15 V, VGS = 10 V - 3.0 - 1.6 nA µA A VGS = - 10 V, ID = - 0.5 A 0.50 VGS = - 6.0 V, ID = - 0.5 A 0.56 gfs VDS = - 15 V, ID = - 0.5 A 2.2 VSD IS = - 1.0 A, VGS = 0 V 0.7 - 1.2 7.7 12 RDS(on) V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A f = 1.0 MHz nC 1.5 2.5 Ω 9 520 VDS = - 25 V, VGS = 0 V, f = 1 MHz pF 40 20 Switchingc Turn-On Time Turn-Off Time Body Diode Reverse Recovery Charge td(on) tr td(off) tf Qrr VDD = - 50 V, RL = 75 Ω ID ≅ - 1.0 A, VGEN = - 10 V Rg = 6 Ω IF = 0.5 A, dI/dt = 100 A/µs 7 11 11 17 16 25 11 17 90 135 ns nC Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VB2103K www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 1.6 VGS = 10 thru 4 V 1.4 1.4 1.2 I D - Drain Current (A) I D - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 TC = 125 °C 0.4 0.2 - 55 °C 2V 0.0 0 2 4 25 °C 0.2 3V 6 8 0.0 10 VDS - Drain-to-Source Voltage (V) 2.5 2.0 1.5 1.0 0.5 0.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.00 500 400 1.50 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.75 1.25 1.00 0.75 VGS = 6 V Ciss 300 200 0.50 100 VGS = 10 V 0.25 Coss 0.00 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Crss 0 30 ID - Drain Current (A) 60 100 110 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.5 VDS = 50 V ID = 0.5 A VGS = 10 V ID = 0.5 A 8 6 4 2 (Normalized) 2.0 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 90 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Gate Charge 7 8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 VB2103K www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3 ID = 0.5 A RDS(on) - On-Resistance (Ω) 2.5 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 2.0 1.5 1.0 0.5 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 12 1.0 10 ID = 250 µA 0.7 8 Power (W) VGS(th) Variance (V) 4 0.4 0.1 6 4 TA = 25 °C - 0.2 - 0.5 - 50 2 - 25 0 25 50 85 75 95 0 100 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 10 IDM Limited Limited by R DS(on)* 10 µs 100 µs I D - Drain Current (A) 1 1 ms 0.1 10 ms ID(on) Limited 0.01 100 ms TA = 25 °C Single Pulse 10 s, 1 s 100 s, DC BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 VB2103K www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient . 服务热线：400-655-8788 5 VB2103K www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C 0.25 mm q Gauge Plane Seating Plane Seating Plane C A1 Dim L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 6 VB2103K www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 服务热线：400-655-8788  7 VB2103K www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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