WSC15N10

WSC15N10 N-Ch MOSFET Product Summery General Description The WSC15N10 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 80mΩ 15A Applications The WSC15N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Load Switch Features TO-251 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 15 A 1 11 A 64 A Single Pulse Avalanche Energy 30 mJ A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 6 PD@TC=25℃ Total Power Dissipation3 60 W PD@TC=100℃ Total Power Dissipation3 30 W TSTG Storage Temperature Range -55 to 170 ℃ TJ Operating Junction Temperature Range -55 to 170 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 50 ℃/W --- 2.5 ℃/W Rev 2: May.2019 WSC15N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=5A --- 80 100 mΩ --- 115 130 mΩ 1.5 2.0 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=4.5V , ID=2A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) 12 21 30 Qgs Gate-Source Charge 3.4 Qgd Td(on) 4.9 6.4 Gate-Drain Charge 2.9 5.8 8.7 Turn-On Delay Time --- 13 24 VDS=50V , VGS=10V , ID=5A uA nC Rise Time VDD=30V , VGS=10V , RG=6Ω --- 10 19 Turn-Off Delay Time ID=1A , RL=30Ω --- 32 60 Fall Time --- 16 30 Ciss Input Capacitance --- 940 --- Coss Output Capacitance --- 80 --- Crss Reverse Transfer Capacitance --- 50 --- Min. Typ. Max. Unit 25 --- --- mJ Min. Typ. Max. Unit --- --- 5 A --- --- 64 A --- --- 1.1 V 33 47 61 nS 61 87 113 nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=6A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=6A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: May.2019 WSC15N10 N-Ch MOSFET Typical Characteristics 25 VGS=10V ID=5A VGS=7V 20 ID Drain Current (A) VGS=5V 15 VGS=4.5V 10 5 VGS=3V 0 0 2 4 6 VDS , Drain-to-Source Voltage (V) Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 VDS=50V ID=5A IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 Normalized VGS(th) (V) 1.4 1 0.6 0.2 2.0 1.5 1.0 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 -50 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 TJ , Junction Temperature (℃) Page 3 Rev 2: May.2019 WSC15N10 N-Ch MOSFET 10000 100.00 F=1.0MHz 10us 100us 10.00 1000 1ms ID (A) Capacitance (pF) Ciss 10ms 100ms 1.00 100 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 1 10 Fig.7 Capacitance 100 VDS (V) VDS , Drain to Source Voltage (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 2: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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