WSD100N06GDN56

WSD100N06GDN56 N-Ch MOSFET General Description Product Summery The WSD100N06GDN56 is the SGT MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 3.0mΩ 100A Applications Secondary Side Synchronous Rectification The WSD100N06GDN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. DC-DC Converter Motor Control Load Switching Features Lead Fre e an d Green Devices Available DFN5x6A-8_EP Pin Configuration (RoH SCom plia nt) 100% UIS + Rg Tested Reliable and Rugged Moistu re Sensitivity Level MSL1 (per JED EC J-STD-020D) Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID1,6 IDM 2 PD Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TC=25°C 100 TC=100°C 65 TC=25°C 240 TC=25°C 83 TC=100°C 50 A A W IAS Avalanche Current, Single pulse 45 A EAS 3 Single Pulse Avalanche Energy 101 mJ TJ Maximum Junction Temperature 150 ℃ -55 to 150 ℃ TSTG Storage Temperature Range RθJA1 Thermal Resistance Junction to ambient Steady State 55 ℃/W RθJC1 Thermal Resistance-Junction to Case Steady State 1.5 ℃/W www.winsok.tw Page 1 Rev 1: Apr.2019 WSD100N06GDN56 N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Conditions Parameter Min. Typ. Max. Unit Static V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS = 0V, ID = 250μA 60 V VDS = 48 V, VGS = 0V 1 30 TJ=85°C VGS = ±20V, VDS = 0V µA ±100 nA 1.8 2.5 V VGS = 10V, ID = 20A 3.0 3.6 mΩ VGS = 4.5V, ID = 15A 4.4 5.4 mΩ On Characteristics VGS(TH) RDS(on)2 Gate Threshold Voltage Drain-Source On-state Resistance VGS = VDS, IDS = 250µA 1.2 Switching Qg Total Gate Charge Qgs Gate-Sour Qgd Gate-Drain Charge td (on) tr VDS=30V VGS=10V ID=20A Charge Turn-on Delay Time VGEN=10V VDD=30V ID=20A RG=Ω Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time Rg Gat resistance VGS=0V, VDS=0V, f=1MHz 58 nC 16 nC 4.0 nC 18 ns 8 ns 50 ns 11 ns 0.7 Ω 3458 pF 1522 pF 22 pF Dynamic Ciss In Capacitance Coss Out Crss Reverse Transfer Capacitance VGS=0V VDS=30V f=1MHz Capacitance Drain-Source Diode Characteristics and Maximum Ratings IS 1,5 Continuous Source Current ISM Pulsed Source Current3 VSD 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current ISD = 1A , VGS=0V ISD=20A, dlSD/dt=100A/µs 0.8 55 A 240 A 1.3 V 27 ns 33 nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.1mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. www.winsok.tw Page 2 Rev 1: Apr.2019 WSD100N06GDN56 N-Ch MOSFET Typical Operating Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Diode Forward Voltage vs. Current Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ www.winsok.tw Page 3 Rev 1: Apr.2019 WSD100N06GDN56 N-Ch MOSFET Typical Operating Characteristics (Cont.) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Respons e (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 1: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.