WSD90P06DN56

WSD90P06DN56 P-Ch MOSFET Product Summery General Description The WSD90P06DN56 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS -60V RDSON ID 10.5mΩ -90A Applications The WSD90P06DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Power Management z Load Switch DFN5X6_8L Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings DFN5*6-8L Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, -VGS @ -10V -90 A ID@TC=100℃ Continuous Drain Current, -VGS @ -10V -39.7 A IDM Pulsed Drain Current -189 A PD@TC=25℃ Total Power Dissipation 96 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 23 ℃/W RθJC Thermal Resistance Junction-Case --- 1.3 ℃/W www.winsok.tw Page 1 Rev 1: May.2019 WSD90P06DN56 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit VGS=0V , ID=-250uA Conditions -60 --- --- V VGS=-10V , ID=-30A --- 10.5 13.5 VGS=-4.5V , ID=-30A --- 13.5 17.5 -1.0 -1.85 -2.5 V VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 uA VGS=±20V , VDS=0V --- --- ±100 nA --- 121 --- --- 20 --- --- 32 --- Turn-On Delay Time --- 20 --- Rise Time VDD = -30 V, RL = 30Ω --- 20 --- Turn-Off Delay Time ID =-1 A, VGEN = -10 V, Rg = 6 --- 205 --- --- 90 --- --- 5600 --- --- 510 --- --- 480 --- Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Ciss VDS = -30 V, VGS = -10 V, ID = -17A Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-30V,VGS=0V, f=1.0MHz mΩ nC ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current Diode Forward Voltage Conditions TC=25℃ --- --- -64 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev 1: May.2019 WSD90P06DN56 P-Ch MOSFET P-Channel Typical Characteristics www.winsok.tw Page 3 Rev 1: May.2019 WSD90P06DN56 P-Ch MOSFET www.winsok.tw Page 4 Rev 1: May.2019 WSD90P06DN56 P-Ch MOSFET www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.