WSD60N10GDN56

WSD60N10GDN56 N-Ch MOSFET General Description Product Summery The WSD60N10GDN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON 100V ID 8.5mΩ 60A Applications The WSD60N10GDN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Power Management in TV Converter. Features z LED TV Back Light z Advanced high cell density Trench technology DFN5X6 Pin Configuration z DC-DC Converter z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 60 A IDP Pulsed Drain Current 210 A EAS Avalanche Energy, Single pulse 100 mJ PD@TC=25℃ Total Power Dissipation 125 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 60 ℃/W --- 1.0 ℃/W Rev 1: May.2019 WSD60N10GDN56 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. 100 VGS=0V , ID=250uA VGS=10V,ID=10A. Static Drain-Source On-Resistance --- Max. Unit --- --- V 8.5 10.0 mΩ mΩ VGS=4.5V,ID=10A. --- 9.5 12.0 Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Qg Total Gate Charge (10V) --- 49.9 --- Qgs Gate-Source Charge --- 6.5 --- Gate-Drain Charge --- 12.4 --- Turn-On Delay Time --- 20.6 --- VGS(th) Qgd Td(on) Tr Td(off) VDS=50V , VGS=10V , ID=25A Rise Time VDD=50V , VGS=10V , --- 5 --- Turn-Off Delay Time RG=2.2Ω, ID=25A --- 51.8 --- nC ns Fall Time --- 9 --- Ciss Input Capacitance --- 2604 --- Coss Output Capacitance --- 362 --- Crss Reverse Transfer Capacitance --- 6.5 --- --- --- 60 A Tf IS Continuous Source Current ISP Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=50V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=12A , TJ=25℃ IF=12A,dI/dt=100A/µs,TJ=25℃ pF --- --- 210 A --- --- 1.3 V --- 60.4 --- nS --- 106.1 --- nC Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. www.winsok.tw Page 2 Rev 1: May.2019 WSD60N10GDN56 N-Ch MOSFET Typical Operating Characteristics V , Drain-source voltage (V) DS Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics DS www.winsok.tw Page 3 Rev 1: May.2019 WSD60N10GDN56 N-Ch MOSFET Typical Operating Characteristics (Cont.) www.winsok.tw Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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