WSD50P10DN56

WSD50P10DN56 P-Ch MOSFET Product Summery General Description The WSD50P10DN56 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -100V 40mΩ -34A Applications The WSD50P10DN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Power Management for Industrial DC / DC Converters. Features DFN5X6 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, -VGS @ -10V -34 A ID@TC=100℃ Continuous Drain Current, -VGS @ -10V -22 A Pulsed Drain Current -136a A Single Pulse Avalanche Energy 182 mJ Avalanche Current -27 A PD@TC=25℃ Total Power Dissipation 96 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ IDM EASc IAS c Thermal Data Symbol Max. Unit RθJA b Thermal Resistance Junction-Ambient Parameter Typ. --- 60 ℃/W RθJC Thermal Resistance Junction-Case --- 1.3 ℃/W Note a：Pulse width is limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. o o Note c：UIS tested and pulse width are limited by maximum junction temperature 150 C(initial temperature TJ=25 C). www.winsok.tw Page 1 Rev 1: May.2019 WSD50P10DN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON)d VGS(th) △VGS(th) Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-18A --- 32 40 VGS=-4.5V , ID=-10A --- 38 51 -1.0 -2.0 -3.0 V --- 4.08 --- mV/℃ VGS=VDS , ID =-250uA --- -30 VGS=±20V , VDS=0V --- --- ±100 --- 56 --- --- 9.5 --- Gate-Drain Charge --- 14.5 --- Turn-On Delay Time --- 17 --- Total Gate Charge Gate-Source Charge Qgde Tfe -100 --- Qgse Td(off) VGS=0V , ID=-250uA VDS=-80V , VGS=0V , TJ=85℃ Qge e Unit --- Gate-Source Leakage Current Tr Max. --- IGSS e Typ. VDS=-80V , VGS=0V , TJ=25℃ Drain-Source Leakage Current Td(on) Min. -1 IDSS e Conditions VDS=-30V , VGS=-10V , ID=-18A mΩ uA nA nC Rise Time VDD=-30V , VGS=-10V , --- 9 --- Turn-Off Delay Time RG=6Ω, ID=-1A ,RL=30Ω. --- 83 --- --- 34 --- --- 2480 3207 --- 268 --- --- 126 --- Min. Typ. Max. Unit Fall Time Cisse Input Capacitance Cosse Output Capacitance Crsse Reverse Transfer Capacitance VDS=-50V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current VG=VD=0V , Force Current --- --- -18 A Diode Forward Voltage VGS=0V , IS=-18A , TJ=25℃ --- --- -1.2 V Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 1: May.2019 WSD50P10DN56 P-Ch MOSFET Typical Characteristics Drain Current Power Dissipation 105 36 32 90 -ID - Drain Current (A) 28 Ptot - Power (W) 75 60 45 30 24 20 16 12 8 15 4 o o 0 T C=25 C 0 20 40 60 80 0 20 40 60 100 120 140 160 80 Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance 100 ) on s( Lim Normalized Transient Thermal Resistance 300 -ID - Drain Current (A) 0 100 120 140 160 T C=25 C,VG=-10V it Rd 100ms 1ms 10 1 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 10ms o TC=25 C 0.1 0.5 1 DC 10 100 1E-4 1E-6 300 -VDS - Drain - Source Voltage (V) www.winsok.tw Single Pulse 1E-5 1E-4 o RqJC :1.3 C/W 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 3 Rev 1: May.2019 WSD50P10DN56 P-Ch MOSFET Output Characteristics Drain-Source On Resistance 70 70 VGS=-4.5,-5,-6,-7, -8,-9,-10V RDS(ON) - On - Resistance (mW) -ID - Drain Current (A) 60 50 -4V 40 30 20 -3.5V 10 0 -3V 0 1 2 3 4 5 VGS=-4.5V 40 VGS=-10V 30 20 10 6 0 10 20 30 40 50 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=-18A 60 IDS=-250mA 1.4 150 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 50 -VDS - Drain - Source Voltage (V) 180 120 90 60 30 0 60 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Rev 1: May.2019 WSD50P10DN56 P-Ch MOSFET Source-Drain Diode Forward Drain-Source On Resistance 2.5 100 VGS = -10V 2.0 -IS - Source Current (A) Normalized On Resistance IDS = -18A 1.5 1.0 0.5 o Tj=150 C 10 o Tj=25 C 1 o 0.0 -50 -25 RON@T j=25 C: 32m W 0 25 50 75 0.1 0.0 100 125 150 1.0 1.2 Gate Charge 10 -VGS - Gate-source Voltage (V) Ciss 2400 2000 1600 1200 800 Coss Crss 5 10 15 20 IDS= -18A 8 7 6 5 4 3 2 1 25 30 35 0 40 -VDS - Drain-Source Voltage (V) www.winsok.tw 1.4 VDS= -50V 9 2800 C - Capacitance (pF) 0.8 Capacitance Frequency=1MHz 0 0.6 -VSD - Source - Drain Voltage (V) 3200 0 0.4 Tj - Junction Temperature (°C) 3600 400 0.2 0 10 20 30 40 50 60 QG - Gate Charge (nC) Page 5 Rev 1: May.2019 WSD50P10DN56 P-Ch MOSFET Transfer Characteristics 40 -ID-Drain Current (A) 35 30 25 20 o Tj=25 C 15 o Tj=125 C 10 5 0 1 2 3 4 5 6 -VGS - Gate-Source Voltage www.winsok.tw Page 6 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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