WSD40N10GDN56

WSD40N10GDN56 N-Ch MOSFET General Description Product Summery The WSD40N10GDN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON 100V ID 16mΩ 40A Applications The WSD40N10GDN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Power Management in TV Converter. Features z LED TV Back Light z Advanced high cell density Trench technology DFN5X6 Pin Configuration z DC-DC Converter z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 40 A IDP Pulsed Drain Current 120 A EAS Avalanche Energy, Single pulse 30 mJ PD@TC=25℃ Total Power Dissipation 72 W -55 to 150 ℃ TJ /TSTG Operating/Storage Temperature Range Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 ℃/W --- 1.74 ℃/W Rev 1: May.2019 WSD40N10GDN56 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Conditions = VGS=0V , ID 250uA Static Drain-Source On-Resistance VGS=10V,ID=8A. Min. Typ. 100 --- Max. Unit --- --- V 16 20 mΩ mΩ VGS=4.5V,ID=6A. --- 22 26 Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Qg Total Gate Charge --- 19.8 --- Qgs Gate-Source Charge 2.4 --- VGS(th) Qgd Td(on) Tr Td(off) Tf Ciss ID=8 A, VDS=50 V, VGS=10 V --- nC Gate-Drain Charge --- 5.3 Turn-On Delay Time --- 17.8 --- --- 3.9 --- --- 33.5 --- --- 3.2 --- --- 1191 --- --- 194 --- --- 4.1 --- --- --- 40 A Rise Time Turn-Off Delay Time VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current ISP Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0 V, VDS=50 V, ƒ=1 MHz VG=VD=0V , Force Current VGS=0V , IS=12A , TJ=25℃ IF=12A,dI/dt= 100A/µs,TJ=25℃ --- ns pF --- --- 120 A --- --- 1.3 V --- 50.2 --- nS --- 95.1 --- nC Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. www.winsok.tw Page 2 Rev 1: May.2019 WSD40N10GDN56 N-Ch MOSFET Typical Operating Characteristics DS Figure 3, Typ. capacitances Figure 4, Typ. gate charge Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance www.winsok.tw Page 3 Rev 1: May.2019 WSD40N10GDN56 N-Ch MOSFET Typical Operating Characteristics (Cont.) www.winsok.tw Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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