WSD4023DN56

WSD4023DN56 N-Ch and P-Channel MOSFET Product Summery General Description The WSD4023DN56 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD4023DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 16mΩ 32A -40V 30mΩ -22A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology DFN5X6C-8-EP2 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 ±20 V 1 32 -22 A 1 21 -17 A 47 -41 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 29 67 mJ IAS Avalanche Current 17.9 -27.3 A 4 PD@TC=25℃ Total Power Dissipation 25 31.3 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W www.winsok.tw Typ. Page 1 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=12A --- 16 21 VGS=4.5V , ID=10A --- 18 25 1.5 2.0 2.5 V --- -4.56 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=12A --- 8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (4.5V) --- 5.5 --- Qgs Gate-Source Charge --- 1.25 --- Qgd Gate-Drain Charge --- 2.5 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 8.9 --- Rise Time VDD=20V , VGS=10V , RG=3.3Ω --- 2.2 --- Turn-Off Delay Time ID=1A --- 41 --- Fall Time --- 2.7 --- Ciss Input Capacitance --- 593 --- Coss Output Capacitance --- 76 --- Crss Reverse Transfer Capacitance --- 56 --- Min. Typ. Max. Unit 9 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 23 A --- --- 46 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-8A --- 30 38 VGS=-4.5V , ID=-4A --- 46 62 -1.5 -2.0 -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Ω Qg Total Gate Charge (-4.5V) --- 9 --- Qgs Gate-Source Charge --- 2.54 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-12A --- 19.2 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 12.8 --- Turn-Off Delay Time ID=-1A --- 48.6 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1004 --- Coss Output Capacitance --- 108 --- Crss Reverse Transfer Capacitance --- 80 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -20 A --- --- -40 A --- --- -1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 3 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics 40 12 ID=12A VGS=10V 35 VGS=7V 8 VGS=5V 6 RDSON (mΩ) ID Drain Current (A) 10 30 VGS=4.5V 4 VGS=3V 25 2 10 0 0 0.5 1 1.5 2 2 VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 8 10 Fig.2 On-Resistance vs. G-S Voltage VDS=20V VGS Gate to Source Voltage (V) IS Source Current(A) 6 VGS (V) 10 12 8 TJ=150℃ TJ=25℃ 4 0 0.00 4 0.25 0.50 0.75 ID=12A 8 6 4 2 0 0 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 4 8 12 QG , Total Gate Charge (nC) 16 Fig.4 Gate-Charge Characteristics 2.0 1.8 Normalized On Resistance 1.7 Normalized VGS(th) 1.4 1.4 1.1 1 0.8 0.6 0.5 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 4 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET 1000 100 F=1.0MHz 10us 100us 10 100 ID (A) Capacitance (pF) Ciss Coss 10ms 100ms DC 1 Crss TC=25℃ Single Pulse 10 0 1 5 9 13 17 21 25 0.1 1 VDS Drain to Source Voltage (V) Fig.7 Capacitance VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (Rthjc) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 Ton T 0.01 D = Ton/T Tj peak = TC + PDM x Rthjc SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Wave Page 5 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics 60 12 ID=-12A VGS=-10V 10 55 RDSON (mΩ) -ID Drain Current (A) VGS=-7V VGS=-5V 8 6 50 45 VGS=-4.5V 40 4 VGS=-3V 35 2 20 0 0 0.5 1 1.5 -VDS Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics of Reverse 12 18 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 6 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 -50 Fig.5 Normalized VGS(th) v.s TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Page 6 Rev 2: Apr.2019 WSD4023DN56 N-Ch and P-Channel MOSFET Capacitance (pF) 10000 100.00 F=1.0MHz 100us 10.00 Ciss 1000 -ID (A) 1ms 10ms 100ms DC 1.00 Coss 100 0.10 Crss o Tc=25 C Single Pulse 10 0.01 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 Fig.7 Capacitance 1 -VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Waveform Page 7 Rev 2: Apr.2019