WSD3810DN

WSD3810DN Dual N-Ch MOSFET Product Summery General Description The WSD3810DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID ITEM 30V 10.8mΩ 18A Q1 30V 10.5mΩ 18A Q2 Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA The WSD3810DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Networking DC-DC Power System Load Switch Features DFN3X3 Asymmetric Dual Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Q1 Q2 Units VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage ±20 ±20 V TC=25°C 18 18 TC=100°C 12.3 12.3 45 45 A ID Drain Current (Continuous) *AC IDM Drain Current (Pulse) *B PD Power Dissipation TC=25°C 20 20 W EAS Single Pulse Avalanche Energy VDD=25V,VGS=10V,L=1mH,R G=25Ω 11 11 mJ RθJC Thermal Resistance Junction to Case 6 6 ℃/W -55~150 -55~150 ℃ TJ//TSTG Operating Temperature/ Storage Temperature www.winsok.tw Page 1 A Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET Q1 Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0V 1 µA IGSS Gate Leakage Current VGS = ±20V, VDS = 0V 100 nA Gate Threshold Voltage VGS = VDS, IDS = 250µA 1.6 2.5 V VGS = 10V, ID = 10A 9 10.8 mΩ VGS = 4.5V, ID = 8A 12 17.5 mΩ 12 VGS(TH) RDS(on) Drain-Source On-state Resistance gFS Forward Transconductance VDS = 5V, ID= 5A VSD Diode Forward Voltage ISD = 1A , VGS=0V V 30 1 S 1.3 V Switching Qg Total Gate Charge 8 nC Qgs Gate-Source Charge 1.6 nC Qgd Gate-Drain Charge 1.2 nC Turn-on Delay Time 8.5 ns 10 ns 14 ns Turn-off Fall Time 10.6 ns Ciss Input Capacitance 455 pF Coss Output Capacitance 318 pF Crss Reverse Transfer Capacitance 22 pF td (on) tr td(off) tf Turn-on Rise Time Turn-off Delay Time VGS=10V, VDS=15V, ID=5A VGS=10V, VDD=15V, ID=1A,RG=6Ω Dynamic VGS=0V, VDS=15V, f=1MHz A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET Q2 Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0V 1 µA IGSS Gate Leakage Current VGS = ±20V, VDS = 0V 100 nA Gate Threshold Voltage VGS = VDS, IDS = 250µA 1.6 2.5 V VGS = 10V, ID = 10A 8.5 10.5 mΩ VGS = 4.5V, ID = 8A 12.5 16 mΩ 12 VGS(TH) RDS(on) Drain-Source On-state Resistance gFS Forward Transconductance VDS = 5V, ID= 5A VSD Diode Forward Voltage ISD = 1A , VGS=0V V 30 1 S 1.3 V Switching Qg Total Gate Charge 8 nC Qgs Gate-Source Charge 1.6 nC Qgd Gate-Drain Charge 1.2 nC Turn-on Delay Time 8.5 ns 10 ns 14 ns Turn-off Fall Time 10.6 ns Ciss Input Capacitance 455 pF Coss Output Capacitance 318 pF Crss Reverse Transfer Capacitance 22 pF td (on) tr td(off) tf Turn-on Rise Time Turn-off Delay Time VGS=10V, VDS=15V, ID=5A VGS=10V, VDD=15V, ID=1A,RG=6Ω Dynamic VGS=0V, VDS=15V, f=1MHz A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 3 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET l Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS www.winsok.tw Page 4 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 5 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 6 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 7 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET l Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS www.winsok.tw Page 8 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 9 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 10 Rev1.Apr.2019 WSD3810DN Dual N-Ch MOSFET www.winsok.tw Page 11 Rev1.Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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