WSD3095DN56

WSD3095DN56 N-Channel MOSFET General Description Product Summery The WSD3095DN56 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 3.5mΩ 95A Applications  Battery protection  Lo Load switch  Uninterruptible power supply Features  Advanced high cell density Trench technology DFN5X6-8 Pin Configuration  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 90 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 51 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 15 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 12 A Pulsed Drain Current2 160 A 115.2 mJ Avalanche Current 48 A PD@TC=25℃ Total Power Dissipation4 59 W PD@TA=25℃ Total Power Dissipation4 2 W Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.1 ℃/W IDM EAS IAS TSTG www.winsok.tw Single Pulse Avalanche Energy3 Page 1 Rev 2: Apr.2019 WSD3095DN56 N-Channel MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=30A --- 3.5 5.5 VGS=4.5V , ID=15A --- 6.5 8.5 1.0 1.6 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) --- 20 --- Qgs Gate-Source Charge --- 7.6 --- Qgd Gate-Drain Charge --- 7.2 --- Turn-On Delay Time --- 7.8 --- --- 15 --- --- 37.3 --- Fall Time --- 10.6 --- Input Capacitance --- 2295 --- --- 267 --- --- 210 --- --- --- 80 A --- --- 160 A --- --- 1.2 V --- 14 --- nS --- 5 --- nC Td(on) Tr Td(off) Tf Ciss Rise Time Turn-Off Delay Time Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3Ω ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs ,TJ=25℃ uA nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3.The test cond≦ 300us , duty cycle ition is VDD=25≦V,V 2%GS =10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD3095DN56 N-Channel MOSFET Typical Characteristics 180 9 ID=12A 120 VGS=10V 90 VGS=7V VGS=5V VGS=3V 8 RDSON (mΩ) ID Drain Current (A) 150 VGS=4.5V 6 60 5 30 0 3 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 ID =15A TJ=150℃ VGS , Gate to Source Voltage (V) TJ=25℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 12 18 24 30 QG , Total Gate Charge (nC) 36 42 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 6 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 -55 150 40 85 130 150 TJ ,Junction Temperature TJ ,Junction Tempera ture (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw -5 Fig.6 Normalized RDSON vs. TJ Page 3 Rev 2: Apr.2019 WSD3095DN56 N-Channel MOSFET 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss Crss 100 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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