WSD3075DN56

WSD3075DN56 N-Ch MOSFET General Description Product Summery The WSD3075DN56 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 30V The WSD3075DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. RDSON 6.5mΩ ID 75A Applications z Battery protection z Load switch Features z Uninterruptible power supply z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current, VGS @ 10V(Tc=25℃) 75 A ID Continuous Drain Current, VGS @ 10V(Tc=100℃) 38 A IDM Pulsed Drain Current 115 A EAS Single Pulse Avalanche Energy 57.8 mJ IAS Avalanche Current 34 A PD Total Power Dissipation (Tc=25℃) 46 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 62 ℃/W RθJC Thermal Resistance Junction-Case 2.7 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSD3075DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=30A --- 6.5 8.5 VGS=4.5V , ID=15A --- 11 14 1.2 1.5 2.5 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 2.9 Ω Qg Total Gate Charge (4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 5.1 7.1 Turn-On Delay Time --- 4.6 9.2 --- 12.2 22 --- 26.6 53 Fall Time --- 8 16 Ciss Input Capacitance --- 1317 1844 Coss Output Capacitance --- 163 228 Crss Reverse Transfer Capacitance --- 131 183 IS Continuous Source Current1,5 --- --- 58 A ISM Pulsed Source Current2,5 --- --- 115 A VSD Diode Forward Voltage2 --- --- 1 V trr Reverse Recovery Time --- 9.2 --- nS Qrr Reverse Recovery Charge --- 2 --- nC Td(on) Tr Td(off) Tf Rise Time Turn-Off Delay Time VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3 ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V,IS=1A , TJ=25℃ IF=30A,dI/dt=100A/µs,TJ=25℃ nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=3 3. 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD3075DN56 N-Ch MOSFET Typical Characteristics 100 ID Drain Current (A) 75 VGS=10V VGS=7V VGS=5V 50 VGS=4.5V VGS=3V 25 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 12 ID =15A VGS , Gate to Source Voltage (V) IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 0 0 0.3 0.6 8 6 VDS=24V 4 2 0 0.9 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse 6 12 18 QG , Total Gate Charge (nC) 24 30 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) VDS=15V 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ Page 3 Rev 2: Apr.2019 WSD3075DN56 N-Ch MOSFET 10000 1000.00 F=1.0MHz Capacitance (pF) 10us 100.00 Ciss 100us 1000 ID (A) 10.00 Coss 10ms 100ms DC 1.00 100 Crss 0.10 TC= 2 5 ℃ Single Pulse 10 1 5 9 13 17 21 0.01 0.1 25 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.17 Unclamped Inductive Switching Waveform Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.