WSD3069DN56

WSD3069DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3069DN56 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3069DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 15mΩ 16A -30V 15mΩ -16A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z Advanced high cell density Trench technology z Super Low Gate Charge z CCFL Back-light Inverter DFN5X6C-8 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings (TA= 25C unless otherwise noted) Parameter Symbol N Channl P Channl Unit VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 Tc=25°C 16 -16 Tc=100°C 10.5 -12.5 35 -65 TA=25°C 9.5 -11 TA=70°C 7.5 -8.5 TC=25°C 10 20 TC=100°C 4 8 Tc=25°C 3.1 4.1 Tc=100°C 2 2.6 Diode Continuous Forward Current Tc=25°C 10 -16 A EAS Single pulsed avalanlce energy C L=0.5mH 7 -36 mJ IAS Single pulsed avalanlce Current L=0.5mH 12 -27 A Tj Maximum Junction Temperature 150 150 -55 to 150 -55 to 150 t≤10S 40 30 °C/W Steady StateC 70 65 °C/W 21 6 °C/W ID Continuous Drain Current G IDM Pulsed Drain Current C IDSM Continuous Drain Current PD Maximum Power Dissipation B PDSM Maximum Power Dissipation A IS TSTG Storage Temperature Range RJA Thermal Resistance-Junction to Ambient AD RJC Thermal Resistance-Junction to Case www.winsok.tw Page 1 V A A A W W °C Rev 2: Apr.2019 WSD3069DN56 N-Ch and P-Channel MOSFET N-Channl Electrical Characteristics Symbol Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS Test Conditions Parameter BVDSS (TJ= 25C unless otherwise noted) Min. Typ. Max. Unit VGS=0V, IDS=250A 30 - - V VDS =24V, VGS=0V - - 1 A - - 5 A Tj=55°C Gate Threshold Voltage VDS =VGS, IDS=250A 1 1.5 2 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=10A - 15 19.5 VGS=4.5V, IDS=5A - 18 24 F=1MHz, VGS=0V, VDS=0V - - 2.8 - 373 - - 67 - RDS(ON) Drain-Source On-state Resistance RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse transfer capacitance - 41 - td(ON) Turn-on delay Time - 4.3 - - 2.8 - - 15.8 - Turn-off rise Time - 3 - Qg Total Gate Charge (10V) - 7.1 - Qg Total Gate Charge (4.5V) - 3.5 - - 1.2 - - 1.6 - tr td(OFF) tf VGS=0V, VDS =15V, Frequency=1.0MHz Turn-on rise Time VGEN=10V ,VDD=15V RG=3Ω, RL=1.5Ω Turn-off delay Time VDS =15V, VGS=10V, IDS=10A m  pF nS nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VSD Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1 V trr Reverse Recovery Time IDS=10A, dlSD/dt=500A/s - 6 - ns - 6.6 - nC Qrr Reverse Recovery Charge A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R JA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RJA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=12°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.winsok.tw Page 5 Rev 2: Apr.2019 WSD3069DN56 N-Ch and P-Channel MOSFET 15 20 12 16 Current rating ID (A) Power Dissipation (W) N-Channl TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9 6 3 0 0 25 50 75 100 125 12 8 4 0 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=70°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) www.winsok.tw Page 6 Rev 2: Apr.2019 WSD3069DN56 N-Ch and P-Channel MOSFET P-Channl TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 -4.5V 30 -ID (A) 25 20 -3.5V 15 10 20 125°C 15 10 VGS=-3V 5 0 VDS=-5V 35 -7V 25 -ID (A) 40 -5V -10V 35 0 1 2 3 4 25°C 5 0 5 0 Normalized On-Resistance RDS(ON) (mΩ) 30 VGS=-4.5V 25 20 15 VGS=-10V 10 5 4 5 6 1.2 1 0.8 0 5 10 15 VGS=-10V ID=-9.7A 1.4 20 VGS=-4.5V ID=-7A 0 60 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+01 ID=-9.7A 50 1.0E+00 40 125°C 1.0E-01 125°C -IS (A) RDS(ON) (mΩ) 3 1.6 35 30 20 1.0E-02 25°C 1.0E-03 25°C 10 0 2 -VGS (Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 0 1 1.0E-04 2 4 6 8 10 1.0E-05 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) www.winsok.tw 0.0 Page 7 Rev 2: Apr.2019 WSD3069DN56 N-Ch and P-Channel MOSFET P-Channl TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=-9.7A 6 4 900 300 0 0 5 10 15 Coss 600 2 0 Ciss 1200 Capacitance (pF) -VGS (Volts) 8 20 Crss 0 15 20 25 30 500 1000.0 10µs 100.0 RDS(ON) limited 10.0 10µs 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 300 200 100 0.1 1 10 -VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 400 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ZθJC Normalized Transient Thermal Resistance 5 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.winsok.tw Page 8 Rev 2: Apr.2019 WSD3069DN56 N-Ch and P-Channel MOSFET P-Channl TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 Power Dissipation (W) 25 16 Current rating -ID (A) 20 15 10 5 0 0 25 50 75 100 125 12 8 4 0 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) www.winsok.tw Page 9 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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