WSD3067DN56

WSD3067DN56 N-Ch and P-Channel MOSFET Product Summery General Description The WSD3067DN56 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3067 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 15mΩ 24A -30V 11mΩ -19.8A Applications z Synchronous Rectification. z Motor Control. z High Current, High Speed Switching. Features z Protable equipment application. z Advanced high cell density Trench technology DFN5X6C-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V Continuous Drain Current, VGS @ 10V 24 -19.8 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 15 -12.6 A IDM@TA=25℃ Pulsed Drain Current 36 -30.4 A mJ ID@TC=25℃ EASa 8.5 18 IAS Avalanche Current 13 -19 A PD@TC=25℃ Total Power Dissipation 18.9 18.9 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Single Pulse Avalanche Energy (L=0.1mH) Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 Typ. --- 95 ℃/W RθJC Thermal Resistance Junction-Case1 --- 45 ℃/W Note a：Pulse width limited by max. junction temperature. Note b：Surface mounted on 1in2 pad area. Note c：UIS tested and pulse width limited by ma ximum junction temperature 150 oC (initial temperature Tj=25o C) www.winsok.tw Page 1 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON)d VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=8A --- 15 20 VGS=4.5V , ID=6A --- 18 23 1.3 1.8 2.5 V --- -5.64 --- mV/℃ VDS=20V , VGS=0V , TJ=25℃ --- --- 1 VDS=20V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.3 4.2 Ω --- 8.3 --- --- 1.1 --- --- 1.8 --- Rg Qg e Total Gate Charge Qgse Gate-Source Charge Qgde Gate-Drain Charge Td(on) e Tre Td(off)e Tfe Cisse Coss e Crsse VDS=20V , VGS=4.5V , ID=8A --- 5.5 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 10.5 --- Turn-Off Delay Time ID=6A --- 15 --- Fall Time --- 3.7 --- Input Capacitance --- 395 --- --- 105 --- --- 42 --- Turn-On Delay Time Output Capacitance VDS=15V , VGS=0V , f=1MHz Reverse Transfer Capacitance uA nC ns pF Diode Characteristics Symbol Min. Typ. Max. Unit Continuous Source Current VG=VD=0V , Force Current --- --- 3.0 A VSDd Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.0 V trr Reverse Recovery Time --- 11 --- nS Qrr Reverse Recovery Charge --- 3.5 --- nC IS Parameter Conditions IF=4A , dI/dt=100A/µs , TJ=25℃ Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON)d Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=-250uA Conditions -30 --- -- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-6A --- 11 14 VGS=-4.5V , ID=-4A --- 15 20 -1.3 -1.8 -2.5 V --- 4.6 --- mV/℃ VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- e Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 12 ±100 ----- e Total Gate Charge (-4.5V) --- 8 --- --- 2 --- --- 4 --- --- 9 --- Rg Qg Qgse Gate-Source Charge Qgde Gate-Drain Charge Td(on) e VDS=-15V , VGS=-4.5V , ID=-6A Turn-On Delay Time Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 11 --- Turn-Off Delay Time ID=-6A --- 55 --- Fall Time --- 34 --- Cisse Input Capacitance --- 750 --- Cosse Output Capacitance --- 140 --- Crsse Reverse Transfer Capacitance --- 102 --- e Tr Td(off)e Tfe VDS=-15V , VGS=0V , f=1MHz mΩ uA nA Ω nC ns pF Diode Characteristicse Symbol Min. Typ. Max. Unit Continuous Source Current VG=VD=0V , Force Current --- --- -6.5 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time --- 17 --- nS Qrr Reverse Recovery Charge --- 9 --- nC IS Parameter Conditions IF=-7A , dI/dt=100A/µs , TJ=25℃ Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 3 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Drain Current 21 28 18 24 15 20 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 12 9 6 3 16 12 8 4 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) TJ- Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 Normalized Transient Thermal Resistance 3 100 ID - Drain Current (A) TC=25 C,VG=10V it im )L n o s( Rd 100ms 10 300ms 1ms 10ms 1 DC o TC=25 C 0.1 0.1 1 10 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 RqJC :6.6 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) Page 4 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Output Characteristics Drain-Source On Resistance 48 40 VGS=4.5,5,6,7,8,9,10V 4V 24 3.5V 16 40 RDS(ON) - On - Resistance (W) ID - Drain Current (A) 32 8 3V 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 16 8 0 5 10 15 20 25 Transfer Characteristics Gate Threshold Voltage 1.6 Normalized T hreshold Voltage RDS(ON) - On - Resistance (mW) VGS=10V ID - Drain Current (A) 60 50 40 30 20 3 4 5 6 7 8 9 30 IDS=250mA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 24 0 3.0 IDS=9A 2 VGS=4.5V VDS - Drain-Source Voltage (V) 70 10 32 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Page 5 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Source-Drain Diode Forward Drain-Source On Resistance 30 1.8 VGS =10V IDS =9A o Tj=150 C 10 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 1 o Tj=25 C 0.6 o RON@Tj=25 C: 18.5mW 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.8 1.0 Capacitance Gate Charge VDS=15V 9 I =4A DS VGS - Gate - source Voltage (V) Ciss 400 350 300 250 200 150 1.2 10 Frequency=1MHz 450 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) 500 Coss Crss 50 0 0.4 TJ - Junction Temperature (°C) 550 100 0.2 8 7 6 5 4 3 2 1 0 5 10 15 20 0 0.0 25 3.0 4.5 6.0 7.5 9.0 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 1.5 Page 6 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Power Dissipation Drain Current 21 24 18 20 -ID - Drain Current (A) Ptot - Power (W) 15 12 9 6 16 12 8 4 3 o o 0 TC=25 C 0 20 40 60 0 20 40 60 80 100 120 140 160 TJ- Junction Temperature (°C) TJ - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 300 100 -ID - Drain Current (A) 0 80 100 120 140 160 TC=25 C,VG=-10V it m Li ) on s( Rd 100ms 10 300ms 1ms 10ms 1 o TC=25 C 1 10 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse o 1E-4 1E-6 100 -VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 1E-3 DC 0.1 0.1 3 RqJC :6.6 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) Page 7 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics Output Characteristics 30 Drain-Source On Resistance 60 VGS=-4.5,-5,-6,-7,-8,-9,-10V -4V 50 RDS(ON) - On - Resistance (W) -ID - Drain Current (A) 25 20 -3.5V 15 10 -3V 5 0 -2.5V 0 1 2 3 4 30 VGS=-10V 20 10 0 5 VGS=-4.5V 40 0 5 -VDS - Drain - Source Voltage (V) 1.6 IDS=-7A 25 30 IDS=-250mA 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 20 Gate Threshold Voltage 100 80 60 40 20 0 15 -ID - Drain Current (A) Transfer Characteristics 120 10 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Page 8 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics Drain-Source On Resistance 1.8 30 VGS = -10V IDS = -7A 1.6 10 1.4 -IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 24mW 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 Gate Charge VDS=-15V 9 I =-7A DS -VGS - Gate - source Voltage (V) C - Capacitance (pF) 800 Ciss 700 600 500 400 300 200 Coss Crss 5 1.5 10 900 8 7 6 5 4 3 2 1 10 15 20 0 0 25 3 6 9 12 15 18 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 1.2 Capacitance Frequency=1MHz 0 0.9 -VSD - Source - Drain Voltage (V) 1000 0 0.6 TJ- Junction Temperature (°C) 1100 100 0.3 Page 9 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET Avalanche Test Circuit and Waveforms N Channel VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01W tAV P Channel VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms N Channel VDS RD VDS DUT RG 90% VGS VDD 10% VGS tp td(on) tr P Channel td(off) tf VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS www.winsok.tw Page 10 Rev 1: Apr.2019 WSD3067DN56 N-Ch and P-Channel MOSFET DFN5×6C-8 OUTLINE 0.15MAX 0.254 0.95±0.1 3.475±0.2 0.60±0.2 1.70±0.2 1.70±0.2 5.55±0.1 6.05±0.2 0.95±0.1 5.2±0.1 0.3 1.29±0.2 1.27 NAME DFN5X6C-8 OUTLINE DWGNO VERSION www.winsok.tw Ver.B UNIT mm DESIGNED PAGE 1 OF 1 CHECKED ISSUE DATE THIRD ANGLE SYSTEM APPROVED Page 11 Rev 1: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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