WSD3056DN

WSD3056DN Dual N-Ch MOSFET Product Summery General Description The WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 13mΩ 35A Applications POL Applications MB / VGA / Vcore The WSD3056DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Load Switch SMPS 2nd SR Features DFN3X3 Dual Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current (Continuous) *AC IDM Drain Current (Pulse) *B PD Power Dissipation TC=25°C 35 TC=100°C 22 TC=25°C A 140 A 27 W EAS Single Pulse Avalanche Energy 13 mJ RθJA Thermal Resistance Junction to ambient 62 ℃/W RθJC Thermal Resistance Junction to Case 4.6 ℃/W -55~150 ℃ TJ//TSTG Operating Temperature/ Storage Temperature www.winsok.tw Page 1 Rev1.Apr.2019 WSD3056DN Dual N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA V IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0V 1 µA IGSS Gate Leakage Current VGS = ±20V, VDS = 0V 100 nA 1.8 2.5 V VGS = 10V, ID = 10A 10 13 mΩ VGS = 4.5V, ID = 8A 14 18 mΩ VDS = 5V, ID= 5A 6 S 7.2 nC 2.3 nC 3 nC 3.8 ns 10 ns 22 ns 6.6 ns 2.8 Ω 620 pF 85 pF 30 pF 30 On Characteristics VGS(TH) RDS(on) gFS Gate Threshold Voltage Drain-Source On-state Resistance Forward Transconductance VGS = VDS, IDS = 250µA 1.2 Switching Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td (on) tr td(off) VGS=10V, VDS=15V, ID=5A Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time tf Turn-off Fall Time Rg Gate resistance VGS=10V, VDD=15V, ID=1A,RG=6Ω VGS=0V, VDS=0V, f=1MHz Dynamic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Drain-Source Diode Characteristics and Maximum Ratings IS Continuous Source Current ISM Pulsed Source Current3 VSD Diode Forward Voltage VG=VD=0V , Force Current ISD = 1A , VGS=0V 35 A 70 A 1.2 V Note : 1，Repetitive Rating : Pulsed width limited by maximum junction temperature. 2，VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=25　,Starting TJ=25℃. 3，The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4，Essentially independent of operating temperature. www.winsok.tw Page 2 Rev1.Apr.2019 WSD3056DN Dual N-Ch MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. Threshold Voltage Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.winsok.tw VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Page 3 Rev1.Apr.2019 WSD3056DN Dual N-Ch MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms www.winsok.tw Page 4 Rev1.Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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