WSD80100DN56
N-Ch MOSFET
General Description
Product Summery
The WSD80100DN56 is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck
converter applications .
BVDSS
RDSON
ID
80V
6.1mΩ
100A
Applications
The WSD80100DN56 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z DC-DC converter switching for Networkong
z General purpose switching
DFN5X6-8 Pin Configuration
Features
z Reliable and Rugged
z Lead Free and Green Devices Available
(RoHS Compliant)
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
TJ
ID
Maximum Junction Temperature
150
°C
-55 to 150
°C
Continuous Drain Current, VGS=10V,TC=25°C
100
A
Continuous Drain Current, VGS=10V,TC=100°C
80
A
Pulsed Drain Current ,TC=25°C
380
A
Maximum Power Dissipation,TC=25°C
ID
IDM
PD
RqJC
EAS
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Storage Temperature Range
200
W
Thermal Resistance-Junction to Case
0.8
°C
Avalanche Energy, Single pulse,L=0.5mH
800
mJ
Page 1
Rev1.0. Jun.2019
WSD80100DN56
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Drain-Source Breakdown Voltage
Max.
Unit
80
---
---
V
Reference to 25℃ , ID=1mA
---
0.043
---
V/℃
VGS=10V , ID=40A
---
6.1
8.5
mΩ
2.0
3.0
4.0
V
mV/℃
VGS=0V , ID 250uA
=
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
gfs
Forward Transconductance
Qg
Total Gate Charge (10V)
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Td(on)
Typ.
Conditions
△BVDSS/△TJ BVDSS Temperature Coefficient
△VGS(th)
Min.
Parameter
---
-6.94
---
VDS=48V , VGS=0V , TJ=25℃
---
---
2
VDS=48V , VGS=0V , TJ=55℃
---
---
10
VGS=±20V , VDS=0V
---
---
±100
nA
80
---
---
S
---
125
---
---
24
---
---
30
---
=
VDS=5V , ID 20A
VDS=30V , VGS=10V , ID=30A
---
20
---
Rise Time
VDD=30V , VGS=10V ,
---
19
---
Turn-Off Delay Time
RG=2.5Ω, ID=2A ,RL=15Ω.
---
70
---
Fall Time
---
30
---
Ciss
Input Capacitance
---
4900
---
Coss
Output Capacitance
---
410
---
Crss
Reverse Transfer Capacitance
---
315
---
Min.
Typ.
Max.
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=25V , VGS=0V , f=1MHz
uA
nC
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=40A , TJ=25℃
Unit
---
---
105
A
---
---
400
A
---
---
1.4
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
www.winsok.tw
Page 2
Rev1.0. Jun.2019
WSD80100DN56
N-Ch MOSFET
ID- Drain Current (A)
Normalized On-Resistance
Typical Characteristics
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Vgs Gate-Source Voltage (V)
Figure 5 Gate Charge
Rdson On-Resistance(mΩ)
Is- Reverse Drain Current (A)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
Page 3
Rev1.0. Jun.2019
WSD80100DN56
Normalized BVdss
C Capacitance (pF)
N-Ch MOSFET
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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Page 4
Rev1.0. Jun.2019
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