WSD40120DN56G

WSD40120DN56G N-Ch MOSFET General Description Product Summery The WSD40120DN use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in BVDSS RDSON ID 40V 1.8mΩ 120A Applications z Consumer electronic power supply z Synchronous-rectification z Synchronous-rectification applications Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors DFN5X6-8 Pin Configuration Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V1 120 A Continuous Drain Current, VGS @ 10V1 82 A 400 A Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 400 mJ IAS Avalanche Current 40 A 4 PD@TC=25℃ Total Power Dissipation 125 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 50 ℃/W --- 1.0 ℃/W Rev 1: May.2019 WSD40120DN56G N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage = VGS=0V , ID 250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Reference to 25℃ , ID=1mA 2 = VGS=10V , ID 20A = VGS=4.5V , ID 20A Min. Typ. Max. Unit 40 --- --- V --- 0.043 --- V/℃ --- 1.4 1.8 mΩ 2.0 2.6 mΩ --1.2 1.6 2.2 V --- -6.94 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA --- 53 --- S --- 1.0 --- Ω --- 45 --- --- 12 --- --- 18.5 --- --- 18.5 --- VGS=VDS , ID =250uA = VDS=5V , ID 20A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=10V , ID=20A Turn-On Delay Time uA nC Rise Time VDD=15V , VGEN=10V , RG=3.3 --- 9 --- Turn-Off Delay Time Ω, ID=20A ,RL=15Ω. --- 58.5 --- Fall Time --- 32 --- Ciss Input Capacitance --- 3972 --- Coss Output Capacitance --- 1119 --- Crss Reverse Transfer Capacitance --- 82 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 100 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tr Td(off) Tf VDS=20V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current 2 Diode Forward Voltage Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2 .The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WSD40120DN56G N-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ www.winsok.tw Fig.6 Normalized RDSON vs TJ Page 3 Rev 1: May.2019 WSD40120DN56G N-Ch MOSFET Fig. ig.7 7 Cap Capac acit itance ance Fig ig..8 Safe Oper eratin ating g Area Normalized Thermal Respons e (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS Td(on) Tr Ton Td(off) BVDSS BVDSS-VDD VDD IAS 10% VGS 1 L x IAS2 x 2 Tf VGS Toff Fig.10 Switching Time Waveform www.winsok.tw Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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