WSD30140DN56

WSD30140DN56 N-Ch MOSFET Product Summery General Description The WSD30140DN56 is the highest performance trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 1.7mΩ 85A Applications The WSD30140DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM ±20 V 1,7 85 A 1,7 65 A 300 A W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 PD@TC=25℃ Total Power Dissipation 50 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 55 ℃/W --- 1.5 ℃/W Rev 1: May.2019 WSD30140DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ --- 1.7 2.4 2.5 3.3 Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VGS=10V , ID=20A VGS=4.5V , ID=15A VGS=VDS , ID =250uA 1.2 1.7 2.5 VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 90 --- S Qg Total Gate Charge (4.5V) --- 26 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge --- 11.4 --- Turn-On Delay Time --- 11 --- Td(on) Tr Td(off) Tf Ciss VDS=15V , VGS=4.5V , ID=20A nC Rise Time VDD=15V , VGEN=10V , --- 6 --- Turn-Off Delay Time RG=3Ω, RL=0.75Ω. --- 38.5 --- --- 10 --- --- 3000 --- --- 1280 --- --- 160 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 85 A VGS=0V , IS=A , TJ=25℃ --- --- 1.2 V Fall Time Input Capacitance VDS=15V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current 2 Diode Forward Voltage A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev 1: May.2019 WSD30140DN56 N-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev 1: May.2019 WSD30140DN56 N-Ch MOSFET www.winsok.tw Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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