WSD6056DN56

WSD6056DN56 Dual N-Ch MOSFET Product Summery General Description The WSD6056DN56 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD6056DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 60V 16mΩ 45A Applications • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA • Fast switching Features • Load Switch • Advanced high cell density Trench technology DFN5X6C-8-EP2 Pin Configuration • Super Low Gate Charge • Excellent CdV/dt effect decline • 100% EAS Guaranteed • Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 150 °C -55 to 150 °C Tc=25°C 45 A Tc=25°C 45 Tc=70°C 28.5 Tc=25°C 180 Tc=25°C 67 TC=70°C 45 Steady State 5 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM b Pulse Drain Current Tested PD Maximum Power Dissipation A A W RJL Thermal Resistance-Junction to Lead RJ A Thermal Resistance-Junction to Ambient IAS d Avalanche Current, Single pulse L=0.5mH 20 A Avalanche Energy, Single pulse L=0.5mH 20 mJ EAS d 45 t 10s Steady State °C/W b 90 °C/W Note a：Max. continuous current is limited by bonding wire. Note b：Pulse width limited by max. junction temperature. Note c：Surface mounted on 1in2 pad area, steady state t = 999s. Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). www.winsok.tw Page 1 Rev 1: May.2019 WSD6056DN56 Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V, IDS=250A 60 - - V - - 1 - - 30 1.2 1.5 2.5 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=85°C A VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 VGS=10V, IDS=20A - 16 20 VGS=4.5V, IDS=15 A - 20 25 ISD=1A, VGS=0V - 0.75 1.2 V - 26 - ns - 30 - nC - 0.9 -  - 945 - - 275 - - 26 - - 10 - - 13.5 - - 28 - - 20 - - 28 - - 17.6 - - 3.5 - - 2.7 - - 6.3 - RDS(ON) 3 Drain-Source On-state Resistance m Diode Characteristics VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics 3,4 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td( OFF) Turn-off Delay Time tf ISD= 20A, dlSD /dt=100A/µs Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, F=1.0MHz Ω VDD=30V, IDS=1A, VGEN=10V, RG=3.3Ω. pF ns Gate Charge Characteristics 3,4 Qg Total Gate Charge Qg Total Gate Charge Qgth Threshold Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=20A VDS=30V, VGS=10V, IDS=20A nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=48V,VGS=10V,L=0.1mH,IAS=20A.,RG=25Ω Starting TJ=25 3. The data tested by pulsed , pulse width