WSD6040DN56

WSD6040DN56 N-Ch MOSFET General Description Product Summery The WSD6040DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 17.5mΩ 36A Applications Secondary Side Synchronous Rectification The WSD6040DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. DC-DC Converter Motor Control Load Switching Features Lead Fre e an d Green Devices Available DFN5x6A-8_EP Pin Configuration (RoH SCom plia nt) 100% UIS + Rg Tested Reliable and Rugged Moistu re Sensitivity Level MSL1 (per JED EC J-STD-020D) Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current ID Continuous Drain Current IDM a Pulsed Drain Current PD Maximum Power Dissipation PD Maximum Power Dissipation TC=25°C 36 TC=100°C 22 TA=25°C 8.4 TA=100°C 6.8 TC=25°C 140 TC=25°C 37.8 TC=100°C 15.1 TA=25°C 2.08 TA=70°C 1.33 A A A W W IAS c Avalanche Current, Single pulse L=0.5mH 16 A EAS c Single Pulse Avalanche Energy L=0.5mH 64 mJ IS Diode Continuous Forward Current TC=25°C 18 A TJ Maximum Junction Temperature 150 ℃ -55 to 150 ℃ TSTG Storage Temperature Range RθJAb Thermal Resistance Junction to ambient Steady State 60 ℃/W RθJC Thermal Resistance-Junction to Case Steady State 3.3 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSD6040DN56 N-Ch MOSFET Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. Note c：UIS tested and pulse width limited by maximum junction temperature 150℃(initial temperature Tj=25℃). Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Conditions Parameter Min. Typ. Max. Unit Static V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS = 0V, ID = 250μA 60 V VDS = 48 V, VGS = 0V 1 TJ=85°C 30 VGS = ±20V, VDS = 0V µA ±100 nA 1.6 2.5 V VGS = 10V, ID = 25A 14 17.5 mΩ VGS = 4.5V, ID = 20A 19 22 mΩ On Characteristics VGS(TH) RDS(on)d Gate Threshold Voltage Drain-Source On-state Resistance VGS = VDS, IDS = 250µA 1 Switching Qg Total Gate Charge Qgs Gate-Sour Qgd Gate-Drain Charge td (on) tr td(off) VDS=30V VGS=10V ID=25A Charge Turn-on Delay Time VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω Turn-on Rise Time Turn-off Delay Time tf Turn-off Fall Time Rg Gat resistance VGS=0V, VDS=0V, f=1MHz 42 nC 6.4 nC 9.6 nC 17 ns 9 ns 58 ns 14 ns 1.5 Ω 2100 pF 140 pF 100 pF Dynamic Ciss In Capacitance Coss Out Crss Reverse Transfer Capacitance VGS=0V VDS=30V f=1MHz Capacitance Drain-Source Diode Characteristics and Maximum Ratings IS Continuous Source Current ISM Pulsed Source Current3 VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current ISD = 20A , VGS=0V ISD=25A, dlSD/dt=100A/µs 0.8 18 A 35 A 1.3 V 27 ns 33 nC Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD6040DN56 N-Ch MOSFET Typical Operating Characteristics Drain Current 40 40 35 35 30 30 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 25 20 15 25 20 15 10 10 5 5 o o TC=25 C 0 20 40 60 80 100 120 140 160 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance 300 Rd s( on ) Li m it 100 ID - Drain Current (A) 0 100ms 10 300ms 1ms 1 o TC=25 C 0.1 0.1 DC 1 10 Normalized Transient Thermal Resistance 0 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 10ms 1E-4 1E-6 100 300 VDS - Drain - Source Voltage (V) www.winsok.tw 3 RqJC :3.3 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 3 Rev 2: Apr.2019 WSD6040DN56 N-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 120 Drain-Source On Resistance 30 VGS=4.5,5,6,7,8,9,10V 4V RDS(ON) - On - Resistance (mW) ID - Drain Current (A) 100 80 60 3.5V 40 20 25 20 VGS=4.5V 15 VGS=10V 10 5 3V 0 0 1 2 3 4 0 5 40 60 80 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=25A 100 IDS =250mA 1.4 30 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 20 VDS - Drain - Source Voltage (V) 35 25 20 15 10 5 0 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Rev 2: Apr.2019 WSD6040DN56 N-Ch MOSFET Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.5 100 VGS = 10V IS - Source Current (A) Normalized On Resistance IDS = 25A 2.0 1.5 1.0 o Tj=150 C 10 o Tj=25 C 1 0.5 o 0.0 -50 -25 RON@Tj=25 C: 12mW 0 25 50 0.1 0.0 75 100 125 150 0.8 1.0 1.2 Gate Charge 10 VGS - Gate-source Voltage (V) 2400 Ciss 2000 1600 1200 800 400 10 15 20 25 30 35 8 7 6 5 4 3 2 0 40 VDS - Drain-Source Voltage (V) www.winsok.tw IDS=25A 1 Coss Crss 5 1.4 VDS=30V 9 2800 C - Capacitance (pF) 0.6 Capacitance Frequency=1MHz 0 0.4 VSD - Source - Drain Voltage (V) 3200 0 0.2 Tj - Junction Temperature (°C) 0 9 18 27 36 45 QG - Gate Charge (nC) Page 5 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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