WSF40P03

WSF40P03 P-Ch MOSFET General Description Product Summery The WSF40P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -30V 18mΩ -40A Applications The WSF40P03 meet the RoHS and Green Product requirement with full function reliability approved. z Power Magagement in Desktop z DC/DC Converters. z Load Switch Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V -40 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V -25 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V -9.6 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V -7.7 A IDM a Pulsed Drain Current -160 A EAS b Single Pulse Avalanche Energy 28 mJ Avalanche Current -20 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ IAS b Thermal Data Symbol RqJA c RθJC Parameter Typ. Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Max. Unit --- 50 ℃/W --- 2.9 ℃/W Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c：Surface Mounted on 1in2 pad area. www.winsok.tw Page 1 Rev 2: May.2019 WSF40P03 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) d VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit -30 --- --- V --- -0.022 --- V/℃ = VGS=-10V , ID -20A --- 15 18 = VGS=-4.5V , ID -15A --- 20 26 -1.2 -1.6 -2.5 VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 = VGS=0V , ID -250uA Reference to 25℃ , ID=-1mA VGS=VDS , ID =-250uA mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.5 --- Ω Qg Total Gate Charge --- 11 --- Qgs Gate-Source Charge --- 5 --- Qgd Gate-Drain Charge --- 5 --- --- 11 20 --- 10 18 --- 39 70 --- 29 53 --- 1256 1633 --- 187 --- --- 115 --- Min. Typ. Max. Td(on) Tr Td(off) Tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Cisse Input Capacitance Cosse Output Capacitance Crsse Reverse Transfer Capacitance VDS=-15V, VGS=-4.5V, IDS=-20A VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=6W VGS=0V, VDS=-15V, Frequency=1.0MHz nC ns pF Diode Characteristics Symbol IS VSD d Parameter Conditions Unit Continuous Source Current VG=VD=0V , Force Current --- --- -20 A Diode Forward Voltage VGS=0V , IS=-1A --- --- -1.2 V --- 12 --- nS --- 3.5 --- nC trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=-20A , dI/dt=100A/µs Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 2: May.2019 WSF40P03 P-Ch MOSFET Typical Operating Characteristics Drain Current 45 45 40 40 35 35 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 30 25 20 15 10 5 25 20 15 10 5 TC=25oC 0 20 40 60 0 80 100 120 140 160 TC=25oC,VG=-10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Tj - Junction Temperature (°C) -ID - Drain Current (A) 0 30 3 0.2 0.1 0.05 0.1 0.02 0.01 1E-3 1E-4 1E-6 -VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 0.01 Single Pulse RqJC :2.9oC/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 3 Rev 2: May.2019 WSF40P03 P-Ch MOSFET Typical Operating Characteristics(Cont.) Output Characteristics Drain-Source On Resistance 100 45 -ID - Drain Current (A) 80 VGS=-6,-7,-8,-9,-10V -5V 60 -4.5V 40 -4V 20 0 -3.5V -3V 0 1 2 3 4 5 RDS(ON) - On - Resistance (mΩ) 40 25 20 VGS=-10V 15 10 0 10 20 30 40 -ID - Drain Current (A) Capacitance Gate Charge 10 Frequency=1MHz -VGS - Gate-source Voltage (V) 1400 Ciss 1200 1000 800 600 400 Coss 200 Crss 0 5 10 15 20 25 -VDS - Drain-Source Voltage (V) www.winsok.tw 8 7 6 5 4 3 2 1 0 30 50 VDS= -15V IDS= -20A 9 1600 C - Capacitance (pF) 30 5 6 VGS=-4.5V -VDS - Drain - Source Voltage (V) 1800 0 35 0 4 8 12 16 20 24 QG - Gate Charge (nC) Page 4 Rev 2: May.2019 WSF40P03 P-Ch MOSFET Typical Operating Characteristics(Cont.) Transfer Characteristics 60 -ID - Drain Current (A) 50 40 30 20 Tj=125oC 10 0 1 2 3 Tj=25oC 4 5 6 7 -VGS - Gate-Source Voltage (V) www.winsok.tw Page 5 Rev 2: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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