WSF30P06

WSF30P06 P-Ch MOSFET Product Summery General Description The WSF30P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON -60V 38mΩ ID -23.5A Applications The WSF30P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Features z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current -23.5 A ID@TC=70℃ Continuous Drain Current -18.7 A IDP Pulsed Drain Current -80 A Total Power Dissipation 30 W Operating/Storage Temperature Range -55 to 150 ℃ PD@TC=25℃ TJ/TSTG Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W RθJC Thermal Resistance Junction-Case --- 4 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSF30P06 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Conditions = VGS=0V , ID -250uA Reference to 25℃ , ID=-1mA Min. Typ. Max. Unit -60 --- --- V --- -0.012 --- V/℃ = VGS=-10V , ID -10A --- 38 48 = VGS=-4.5V , ID -5A --- 50 62 -1.0 -1.65 -2.5 VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 --- 45 --- --- 8 --- --- 10 --- VGS=VDS , ID =-250uA VGS=-10V, VDS=-30V, ID=-20A Turn-On Delay Time --- 13 --- Rise Time VGS=-10V, VDS=-30V, RL=1.5Ω, --- 15 --- Turn-Off Delay Time RGEN=3Ω --- 37 --- --- 15 --- --- 2980 --- --- 245 --- --- 155 --- Min. Typ. Max. Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-30V,VGS=0V, f=1.0MHz mΩ V uA nA nC ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Unit Continuous Source Current VG=VD=0V , Force Current --- --- -23.5 A Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev 2: Apr.2019 WSF30P06 P-Ch MOSFET P-Channel Typical Characteristics www.winsok.tw Page 3 Rev 2: Apr.2019 WSF45P06 P-Ch MOSFET www.winsok.tw Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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