WSF20N20

WSF20N20 N-Ch MOSFET General Description Product Summery The WSF20N20 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 200V 136mΩ 20A The WSF20N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 200 V Gate-Source Voltage ±20 V 1 20 A 1 12 A 1 6 A 1 4.5 A 64 A Single Pulse Avalanche Energy 35 mJ A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 5 PD@TC=25℃ Total Power Dissipation3 50 W PD@Tc=100℃ Total Power Dissipation3 20 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 50 ℃/W --- 2.5 ℃/W Rev 3: Apr.2019 WSF20N20 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 200 --- --- V --- 0.098 --- V/℃ --- 136 160 mΩ --- 200 380 mΩ 1.0 2.0 3.0 V --- -4.57 --- mV/℃ VDS=160V , VGS=0V , TJ=25℃ --- --- 1 VDS=160V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=8A VGS=6.0V , ID=4A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω --- 68 --- --- 42 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Td(on) VDS=100V , VGS=10V , ID=8A Gate-Drain Charge --- 35 --- Turn-On Delay Time --- 17 --- uA nC Rise Time VDD=30V , VGS=10V , RG=6Ω --- 11 --- Turn-Off Delay Time ID=10A RL=30Ω --- 47 --- Fall Time --- 14 --- Ciss Input Capacitance --- 3100 --- Coss Output Capacitance --- 210 --- Crss Reverse Transfer Capacitance --- 150 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit --- --- 20 A --- --- 64 A --- --- 1.1 V --- 105 --- nS --- 360 --- nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=5A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t