WSF10N40

WSF10N40 N-Ch MOSFET General Description Product Summery The WSF10N40 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 400V 515mΩ 10A Applications • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies Features • Industrial Actuators TO-252 Pin Configuration • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 400 V Gate-Source Voltage ±25 V 1 10.0 A 1 5.6 A 1 1.2 A 1 0.6 A 36 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 220 mJ IAS Avalanche Current 27 A 4 56.0 W 4 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 62 2.1 ℃/W --- ℃/W Rev 2: Apr.2019 WSF10N40 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) VGS=0V , ID=250uA Reference to 25℃, ID = 250uA Min. Typ. Max. Unit 400 --- --- V --- V/℃ --- 0.3 = = VGS 10V,ID 4.5A Static Drain-Source On-Resistance2 VGS=8.0V , ID=3A --- 515 607 --- 1100 2000 Gate Threshold Voltage 2.0 --- 4.0 V --- -5.52 --- mV/℃ VDS=320V , VGS=0V , TJ=25℃ --- --- 10 VDS=320V , VGS=0V , TJ=55℃ --- --- 100 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=30V , ID=4.5A --- 8.0 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 3.2 Ω Qg Total Gate Charge (10V) --- 25 35 Qgs Gate-Source Charge --- 4.0 6.0 Qgd Gate-Drain Charge --- 10.5 12.1 Turn-On Delay Time --- 12.4 --- Td(on) VDS=320V , VGS=10V , ID=9A uA nC Rise Time VDD=200V , VGS=10V , RG=5Ω --- 20.1 --- Turn-Off Delay Time ID=9A --- 38.5 --- Fall Time --- 10.8 --- Ciss Input Capacitance --- 740 --- Coss Output Capacitance --- 83 --- Crss Reverse Transfer Capacitance --- 9.0 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- 9.0 A Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=4.5A IF=9A , dI/dt=100A/µs --- --- 35 A --- --- 1.5 V --- 320 --- nS --- 1345 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t