WSD3023DN56
N-Ch and P-Channel MOSFET
General Description
Product Summery
The WSD3023DN56 is the highest performance
trench N-ch and P-ch MOSFETs with extreme
high cell density , which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications .
The WSD3023DN56 meet the RoHS and
Green Product requirement 100% EAS
guaranteed with full function reliability
approved.
BVDSS
RDSON
ID
30V
14mΩ
14A
-30V
23mΩ
-12A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z CCFL Back-light Inverter
z Advanced high cell density Trench technology
DFN5X6C-8-EP2 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID
a
IDP
EAS
c
IAS
c
Continuous Drain Current, VGS(NP)=10V,Ta=25℃
14*
-12
A
Continuous Drain Current, VGS(NP)=10V,Ta=70℃
7.6
-9.7
A
Pulse Drain Current Tested, VGS(NP)=10V
Avalanche Energy, Single pulse ,
48
-48
A
L=0.5mH
20
20
mJ
Avalanche Current, Single pulse ,
L=0.5mH
9
-9
A
5.25
5.25
W
-55 to 175
-55 to 175
℃
175
175
℃
60
60
℃/W
6.25
6.25
℃/W
PD
Total Power Dissipation, Ta=25℃
TSTG
Storage Temperature Range
TJ
RqJA
RqJC
Operating Junction Temperature Range
b
Thermal Resistance-Junction to Ambient,Steady State
Thermal Resistance-Junction to Case,Steady State
Note *:Max. current is limited by bonding wire.
Note a:Pulse width limited by max. junction temperature.
2
Note b:RqJA steady state t=999s. RθJA is measured with the device mounted on 1in , FR-4 board with 2oz. Copper.
o
o
Note c:UIS tested and pulse width limited by maximum junction temperature 175 C (initial temperature Tj=25 C).
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Page 1
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
RDS(ON)d
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Conditions
Min.
Typ.
Max.
VGS=0V , ID=250uA
30
VGS=10V , ID=8A
---
--14
--18.5
VGS=4.5V , ID=5A
---
17
25
VGS=VDS , ID =250uA
1.3
1.8
2.3
VDS=20V , VGS=0V , TJ=25℃
---
---
1
VDS=20V , VGS=0V , TJ=85℃
---
---
30
Unit
V
mΩ
V
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
---
5.2
---
---
1.0
---
---
2.8
---
---
6
---
---
8.6
---
---
16
---
Fall Time
---
3.6
---
Input Capacitance
---
545
---
---
95
---
---
55
---
Min.
Typ.
Unit
V
Rg
Qg
e
Total Gate Charge
Qgse
Gate-Source Charge
Qgde
Gate-Drain Charge
Td(on)e
Tre
Rise Time
Td(off)
e
Tfe
Cisse
Coss
Turn-On Delay Time
e
Crsse
Turn-Off Delay Time
Output Capacitance
VDS =15V, V GS=4.5V,
I D S =8A
VDD =15V,RL=15R,
ID S =1A,VGEN=10V,
R G =6R.
VDS=15V , VGS=0V , f=1MHz
Reverse Transfer Capacitance
nC
ns
pF
Diode Characteristics
Symbol
IS
VSD
d
Parameter
Conditions
Continuous Source Current
VG=VD=0V , Force Current
---
---
Max.
12
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
A
Note d:Pulse test ; pulse width£300ms, duty cycle£2%.
Note e:Guaranteed by design, not subject to production testing.
www.winsok.tw
Page 2
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)d
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Qg
e
Conditions
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
VGS=-10V , ID=-12A
---
23
32.5
VGS=-4.5V , ID=-5A
---
32
42
-1.3
-1.8
-2.3
VDS=-20V , VGS=0V , TJ=25℃
---
---
-1
VDS=-20V , VGS=0V , TJ=85℃
---
---
-30
VGS=±20V , VDS=0V
---
---
±100
---
13
---
---
1.0
---
VGS=VDS , ID =-250uA
Total Gate Charge
Qgse
Gate-Source Charge
Qgde
Gate-Drain Charge
---
4.0
---
Turn-On Delay Time
---
8.7
---
Td(on)
e
e
Tr
Td(off)
e
Tfe
VDS=-15V , VGS=-4.5V , ID=-12A
Rise Time
VDD=-15V , VGS=-10V , RG=6Ω,
---
10
---
Turn-Off Delay Time
ID=-1A ,RL=15Ω,
---
22
---
---
9.0
---
---
580
---
---
105
---
---
72
---
Fall Time
Cisse
Input Capacitance
Cosse
Output Capacitance
Crsse
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
mΩ
V
uA
nA
nC
ns
pF
Diode Characteristics
Symbol
IS
VSD
e
Parameter
Conditions
Min.
Typ.
Max.
Unit
Continuous Source Current
VG=VD=0V , Force Current
---
---
-10
A
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note d:Pulse test; pulse width£300ms, duty cycle£2%.
Note e:Guaranteed by design, not subject to production testing.
www.winsok.tw
Page 3
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
N-Channel Typical Characteristics
Drain Current
28
16
24
14
20
12
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
16
12
8
8
6
4
4
2
o
0
o
TC=25 C
0
20
40
60
0
80 100 120 140 160 180
TC=25 C,VG=10V
0
20
Tj - Junction Temperature (°C)
1ms
10ms
100ms
1
1s
DC
0.1
0.1
1
10
100
2
Normalized Transient Thermal Resistance
im
it
)L
Rd
s(
on
ID - Drain Current (A)
300ms
o
1
Duty =
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
0.01
1E-4
Mounted on 1in pad
o
RqJA :20 C/W
1E-3
0.01
0.1
1
10
60
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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80 100 120 140 160 180
Thermal Transient Impedance
100
TC=25 C
60
Tj - Junction Temperature (°C)
Safe Operation Area
10
40
Page 4
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
N-Channel Typical Characteristics
Drain-Source On Resistance
Output Characteristics
50
30
VGS=5,6,7,8,9,10V
4V
RDS(ON) - On - Resistance (mW)
ID - Drain Current (A)
40
30
3.5V
20
3V
10
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
25
VGS=10V
15
10
5
3.0
VGS=4.5V
20
0
10
20
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
50
1.6
IDS =250mA
IDS=8A
50
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (mW)
40
VDS - Drain - Source Voltage (V)
60
40
30
20
10
0
30
2
3
4
5
6
7
8
9
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
10
0
25
50
75 100 125 150 175
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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1.4
Page 5
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
N-Channel Typical Characteristics
Drain-Source On Resistance
2.5
Source-Drain Diode Forward
50
VGS = 10V
2.0
10
IS - Source Current (A)
Normalized On Resistance
IDS = 8A
1.5
1.0
0.5
o
Tj=150 C
o
Tj=25 C
1
o
RON@Tj=25 C: 14mW
0.0
-50 -25
0
25
50
0.1
0.0
75 100 125 150 175
0.6
0.8
1.0
1.2
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.4
10
Frequency=1MHz
720
9
560
VGS - Gate-source Voltage (V)
640
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
800
Ciss
480
400
320
240
160
Coss
Crss
80
0
0.2
0
5
10
15
IDS=8A
8
7
6
5
4
3
2
1
20
25
0
0
30
2
4
6
8
10
12
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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VDS=15V
Page 6
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
P-Channel Typical Characteristics
Drain Current
14
24
12
20
10
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
28
16
12
8
4
8
6
4
2
o
0
o
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
TC=25 C,VG=-10V
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
10
300ms
1ms
10ms
100ms
1
1s
DC
o
TC=25 C
0.1
0.1
1
10
Normalized Transient Thermal Resistance
2
Rd
s(
on
)L
im
it
ID - Drain Current (A)
100
Duty = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
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1
Mounted on 1in pad
o
RqJA : 20 C/W
1E-3
0.01
0.1
1
10
60
Square Wave Pulse Duration (sec)
Page 7
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
P-Channel Typical Characteristics
Drain-Source On Resistance
Output Characteristics
50
RDS(ON) - On - Resistance (mW)
-5V
40
ID - Drain Current (A)
100
VGS=-6,-7,-8,-9,-10V
-4.5V
30
-4V
20
-3.5V
10
0
-3V
-2.5V
0
1
2
3
4
80
VGS=-4.5V
60
20
0
5
VGS=-10V
40
0
10
20
40
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
80
50
1.8
IDS=-12A
IDS = -250mA
1.6
70
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (mW)
30
60
50
40
30
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
2
3
4
5
6
7
8
9
0.0
-50 -25
10
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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0
Page 8
Rev 2: Apr.2019
WSD3023DN56
N-Ch and P-Channel MOSFET
P-Channel Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
50
1.8
VGS = -10V
IDS = -12A
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
0.6
o
0.4
-50 -25
RON@Tj=25 C: 29mW
0
0.1
0.0
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
0.3
0.6
Capacitance
Gate Charge
VDS=-15V
9 I =-12A
DS
700
8
VGS - Gate-source Voltage (V)
C - Capacitance (pF)
Frequency=1MHz
Ciss
500
400
300
200
0
0
Coss
7
6
5
4
3
2
1
5
10
15
20
25
0
0
30
2
4
6
8
10
12
14
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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1.5
10
800
100 Crss
1.2
-VSD - Source - Drain Voltage (V)
900
600
0.9
Page 9
Rev 2: Apr.2019
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