WSF4022

WSF4022 Dual N-Ch MOSFET General Description Product Summery BVDSS RDSON 40V 21mΩ The WSF4022 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications For Fan Pre-driver H-Bridge. Motor Control. Synchronous Rectification. The WSF4022 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available TO-252-4L Pin Configuration Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol VDS VGS ID ID ID ID Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC Drain Current (Continuous) *AC Drain Current (Continuous) *AC Drain Current (Continuous) *AC TC=25°C TC=100°C TA=25°C TA=70°C IDMa Pulsed Drain Current TC=25°C b Single Pulse Avalanche Energy L=0.5mH b Avalanche Current L=0.5mH TC=25°C TC=100°C TA=25°C TA=70°C EAS IAS PD PD PD PD TJ TSTG b RθJA RθJC Maximum Power Dissipation Maximum Power Dissipation Power Dissipation Power Dissipation Operating Junction Temperature Range Operating Temperature/ Storage Temperature Thermal Resistance Junction-Ambient ID 20A Steady State c Thermal Resistance Junction to Case Rating Units 40 ±20 20* 20* 12.2 10.2 80* V V A A A A A 25 17.8 mJ 39.4 19.7 6.4 4.2 175 -55~175 W W W W 60 3.8 A ℃ ℃ ℃/W ℃/W Note *：Limited by package. Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 175℃(initial temperature Tj=25℃). Note c：Surface Mounted on 1in2 pad area, t =999sec. www.winsok.tw Page 1 Rev1.0 May.2019 WSF4022 Dual N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Conditions Symbol Parameter Min. Typ. Max. Unit Static V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V, TJ=85°C 30 µA IGSS Gate Leakage Current VGS = ±20V, VDS = 0V ±100 nA Gate Threshold Voltage VGS = VDS, IDS = 250µA 1.6 2.5 V VGS = 10V, ID = 10A 16 21 mΩ VGS = 4.5V, ID = 5A 18 25 mΩ VGS(th) RDS(on) d Drain-Source On-state Resistance V 40 1.1 Gate Chargee Qg Total Gate Charge 7.5 nC Qgs Gate-Source Charge 3.24 nC Qgd Gate-Drain Charge 2.75 nC Ciss Input Capacitance 815 pF Coss Output Capacitance 95 pF Crss Reverse Transfer Capacitance 60 pF td (on) Turn-on Delay Time 7.8 ns tr Turn-on Rise Time 6.9 ns td(off) Turn-off Delay Time 22.4 ns 4.8 ns Dynamic VDS=20V,VGS=4.5V, ID=10A e tf VGS=0V, VDS=20V, f=1MHz VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. Turn-off Fall Time Diode VSDd Diode Forward Voltage trr Input Capacitance Qrr Output Capacitance ISD=1A, VGS=0V IDS=10A, dlSD/dt=100A/µs 0.75 1.1 V 13 ns 8.7 nC Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. 　 Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev1.0 May.2019 WSF4022 Dual N-Ch MOSFET Typical Characteristics Drain Current 42 24 35 20 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 28 21 14 7 16 12 8 4 o TC=25 C,VG=10V o 0 TC=25 C 0 20 40 60 0 80 100 120 140 160 180 0 20 Tj - Junction Temperature (°C) 100ms 1ms 1 10ms DC o TC=25 C 1 10 Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 100 0.1 3 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 300 RqJC :3.8 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) www.winsok.tw 80 100 120 140 160 180 Thermal Transient Impedance 300 0.1 0.01 60 Tj - Junction Temperature (°C) Safe Operation Area 10 40 Page 3 Rev1.0 May.2019 WSF4022 Dual N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Output Characteristics 35 60 VGS=5,6,7,8,9,10V ID - Drain Current (A) RDS(ON) - On - Resistance (mW) 4V 50 40 30 3.5V 20 10 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=10V 15 10 0 10 20 30 40 50 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 50 40 30 20 10 3 4 5 6 7 8 9 IDS =250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 60 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) VGS=4.5V 20 5 3.0 IDS=10A 2 25 VDS - Drain - Source Voltage (V) 60 0 30 Page 4 Rev1.0 May.2019 WSF4022 Dual N-Ch MOSFET Typical Characteristics Drain-Source On Resistance 2.5 Source-Drain Diode Forward 80 VGS = 10V 2.0 IS - Source Current (A) Normalized On Resistance IDS = 10A 1.5 1.0 0.5 10 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 16mW 0.0 -50 -25 0 25 50 0.6 0.9 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge VDS=20V 9 I =10A DS VGS - Gate-source Voltage (V) Ciss 800 600 400 200 Coss 8 16 24 32 7 6 5 4 3 2 0 0 40 4 8 12 16 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 8 1 Crss 0 1.5 10 Frequency=1MHz 1000 0 0.3 Tj - Junction Temperature (°C) 1200 C - Capacitance (pF) 0.1 0.0 75 100 125 150 175 Page 5 Rev1.0 May.2019 WSF4022 Dual N-Ch MOSFET Avalanche Test Circuit and Waveforms N Channel VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01W tAV Switching Time Test Circuit and Waveforms N Channel VDS RD VDS DUT RG 90% VGS VDD 10% VGS tp td(on) tr www.winsok.tw Page 6 td(off) tf Rev1.0 May.2019 Package Information TO-252-4 L4 H D L3 E1 A 2.18 2.39 A1 - 0.2 - 0.008 0.028 0.086 b 0.50 0.71 0.020 b3 4.32 5.46 0.170 0.215 0.024 c 0.46 0.61 0.018 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 1.30 BSC 9.40 10.41 0.370 0.410 L 1.40 1.78 0.055 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0 8 0 www.winsok.tw 6 6.5 2.4 0.051 BSC H o 5.8 0.094 o o 8o 1.3 0.6 UNIT: mm Rev1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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