WSF3012

WSF3012 N-Ch and P-Channel MOSFET Product Summery General Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 18mΩ 22A -30V 30mΩ -15A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology TO-252-4L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM ±20 ±20 V 1 23 -15 A 1 13.1 -9.6 A 55 -49 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 28 66 mJ IAS Avalanche Current 17.8 -27.2 A 32.5 W 4 PD@TC=25℃ Total Power Dissipation 32.5 TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W www.winsok.tw Typ. Page 1 Rev1.0 May.2019 WSF3012 N-Ch and P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.033 --- V/℃ VGS=10V , ID=12A --- 13 18 VGS=4.5V , ID=10A --- 16 21 1.2 1.5 2.5 V --- -4.52 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 6.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (4.5V) --- 7.4 --- Qgs Gate-Source Charge --- 2.3 --- Qgd Gate-Drain Charge --- 3 --- Turn-On Delay Time --- 3.8 --- Rise Time --- 10 --- --- 22 --- Fall Time --- 6.6 --- Ciss Input Capacitance --- 620 --- Coss Output Capacitance --- 85 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit 25 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf VDS=15V , VGS=10V , ID=8A VDD=15V , VGS=10V , ID=8A Turn-Off Delay Time VDS=15V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 21 A --- --- 42 A --- --- 1.1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.0 May.2019 WSF3012 N-Ch and P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.011 --- V/℃ VGS=-10V , ID=-7A --- 24 29 VGS=-4.5V , ID=-4A --- 35 46 -1.2 -1.6 -2.5 V --- 4.31 --- mV/℃ VDS=-30V , VGS=0V , TJ=25℃ --- --- 1 VDS=-30V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 10 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 14 16 Ω Qg Total Gate Charge (-4.5V) --- 8 --- Qgs Gate-Source Charge --- 3.3 --- Qgd Gate-Drain Charge --- 2.3 ----- VDS=-20V , VGS=-4.5V , ID=-12A nC --- 4.6 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 14 --- Turn-Off Delay Time ID=-1A --- 34 --- Fall Time --- 18 --- Ciss Input Capacitance --- 757 --- Coss Output Capacitance --- 122 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -15 A --- --- -35 A --- --- -1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 3 Rev1.0 May.2019 WSF3012 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics www.winsok.tw Page 4 Rev1.0 May.2019 WSF3012 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics www.winsok.tw Page 5 Rev1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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