WSF60N06

WSF60N06 N-Ch MOSFET General Description Product Summery The WSF60N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 10mΩ 60A Applications The WSF60N06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 40 A 1 40 A 1 30 A 250 A ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 48 mJ IAS Avalanche Current PD@TC=25℃ 28 A 4 20 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 ℃/W --- 2 ℃/W Rev 2: May.2019 WSF60N06 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 10 12 VGS=4.5V , ID=10A --- 12 15 mΩ 1.0 1.8 3.0 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 9 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) --- 9 36 Qgs Gate-Source Charge --- 4.5 10 Qgd Gate-Drain Charge --- 7.5 15 --- 8.2 14.4 --- 5.8 90 --- 25 73 Fall Time --- 8.8 15.2 Ciss Input Capacitance --- 1896 2578 Coss Output Capacitance --- 125 203 Crss Reverse Transfer Capacitance --- 89 136 Min. Typ. Max. Unit 45 --- --- mJ Min. Typ. Max. Unit --- --- 40 A --- --- 90 A --- --- 1 V VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA VDS=48V , VGS=4.5V , ID=15A Turn-On Delay Time VDD=30V , VGS=10V , Rise Time RG=3.3Ω, ID=1A ,RL=15Ω. Turn-Off Delay Time VDS=15V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=28A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A ,dI/dt=100A/µs,TJ=25℃ --- 21 --- nS --- 16 --- nC Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t