WSP4445

WSP4445 P-Ch MOSFET Features Product Summery · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · HBM ESD protection level pass 8KV Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. -40V/-16.7A, RDS(ON)=8.5mW (max.) @ VGS =-20V RDS(ON)=10mW (max.) @ VGS =-10V RDS(ON)=16mW (max.) @ VGS=-4.5V SOP-8 Pin Configuration Applications · Power Management in LCD TV Inverter. Absolute Maximum Ratings Symbol Parameter Rating V DSS Drain-Source Voltage -40 VGSS Gate-Source Voltage ±25 ID a IDM IS Continuous Drain Current (VGS=-10V) a a IAS EAS b b TJ -13.3 Diode Continuous Forward Current -4 Avalanche Current, Single pulse Avalanche Energy, Single pulse L=0.1mH -43 L=0.5mH -24 L=0.1mH 92 L=0.5mH 144 Maximum Junction Temperature PD a Maximum Power Dissipation R TA=70°C -66 Storage Temperature Range c qJ L -16.7 Pulsed Drain Current (VGS=-10V) TSTG R qJA a TA=25°C Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Lead 150 -55 to 150 TA=25°C 4.2 TA=70°C 2.7 t £ 10s 30 Steady State 75 Steady State 24 Unit V A mJ °C W °C/W Note a：Surface Mounted on 1in2 pad area, t £ 10sec. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). o Note c：The power dissipation P D is based on TJ(MAX) = 150 C, and it is useful for reducing junction-to-case thermal resistance (RqJC) when additional heat sink is used. www.winsok.tw Page 1 Rev 2: Apr.2019 WSP4445 P-Ch MOSFET Electrical Characteristics (TA = 25°C unless otherwise noted) Test Conditions Min. Typ. Max. Unit -40 - - V - - -1 - - -30 -1.5 -2 -2.5 V V GS=±20V, VDS=0V - - ±10 mA V GS=-20V, I DS=-16A - 7 8.5 Drain-Source On-state Resistance V GS=-10V, I DS=-16A - 7.9 10 V GS=-4.5V, IDS=-10A - 11.5 16 I SD=-1A, VGS=0V - -0.75 -1 V - 26 - ns - 19 - nC - 3.2 - W - 2764 - - 417 - - 325 - - 15 - - 12 - - 56 - - 21 - - 60 - - 7.6 - - 15 - Symbol Parameter Static Characteristics BV DSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS V GS(th) Gate Threshold Voltage Gate Leakage Current IGSS R DS(ON) d V GS=0V, I DS=-250mA V DS=-32V, VGS=0V TJ=85°C V DS=V GS, IDS =-250mA mA mW Diode Characteristics VSDd Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance Cis s Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf I SD=-16A, dlSD/dt=100A/ms V GS=0V,VDS=0V,F=1MHz V GS=0V, V DS=-20V, Frequency=1.0MHz V DD =-20V, R L =20W, I DS=-1A, VGEN =-10V, R G=6W Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Q gs Gate-Source Charge Qgd Gate-Drain Charge pF ns e V DS=-20V, VGS=-10V, I DS=-16A nC Note d：Pulse test; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 2: Apr.2019 WSP4445 P-Ch MOSFET Typical Characteristics Power Dissipation Drain Current 18 5 15 -ID - Drain Current (A) Ptot - Power (W) 4 3 2 12 9 6 1 3 o o 0 TA=25 C 0 20 40 60 80 0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 R ds (o n )L im it 100 10 300ms 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0.1 1 10 100 300 Normalized Transient Thermal Resistance 300 -ID - Drain Current (A) TA=25 C,VG=-10V 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 -VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 Mounted on 1in pad o RqJA :30 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Page 3 Rev 2: Apr.2019 WSP4445 P-Ch MOSFET Output Characteristics 70 21 VGS=-5,-6,-7,-8,-9,-10V -4V 18 RDS(ON) - On - Resistance (mW) 60 -ID - Drain Current (A) Drain-Source On Resistance 50 40 30 -3.5V 20 10 0.5 1.0 1.5 2.0 2.5 VGS=-20V 6 0 3.0 0 10 20 30 40 50 60 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=-16A 70 IDS= -250mA 1.4 Normalized Threshold Voltage 40 RDS(ON) - On Resistance (mW) VGS=-10V 9 -VDS - Drain-Source Voltage (V) 48 32 24 16 8 0 VGS=-4.5V 12 3 -3V 0 0.0 15 2 4 6 8 10 12 14 16 18 1.0 0.8 0.6 0.4 0.2 -50 -25 20 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Rev 2: Apr.2019 WSP4445 P-Ch MOSFET Drain-Source On Resistance 1.8 70 VGS = -10V IDS = -16A -IS - Source Current (A) 1.6 Normalized On Resistance Source-Drain Diode Forward 1.4 1.2 1.0 0.8 10 o T j=150 C o T j=25 C 1 0.6 o 0.4 -50 RON@T j=25 C: 7.9m W -25 0 25 50 75 0.1 0.0 100 125 150 1.0 1.2 Gate Charge -VGS - Gate - source Voltage (V) 3000 Ciss 2400 1800 1200 600 Coss Crss 8 16 1.4 10 3600 C - Capacitance (pF) 0.8 Capacitance VDS= -20V 9 IDS= -16A 8 7 6 5 4 3 2 1 24 32 0 40 0 10 20 30 40 50 60 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 0.6 -VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 4200 0 0.2 Page 5 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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