WSP05N15

WSP05N15 N-Ch MOSFET General Description Product Summery The WSP05N15 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 150V 37mΩ 6A Applications The WSF05N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Power Management for Boost Converters. z Synchronous Rectifiers for SMPS. z LED Backlighting. Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ IDM ±25 V 1 6.0 A 1 4.8 A 24 A mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 36 IAS Avalanche Current 12 A 4 PD@TA=25℃ Total Power Dissipation 3.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 70 ℃/W --- 24 ℃/W Rev 2: Apr.2019 WSP05N15 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 150 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=6A --- 37 45 --- 48 78 2.0 3.0 4.0 V --- -5.52 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=6V , ID=2A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 6.2 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 3.2 Ω Qg Total Gate Charge (10V) --- 23 33 Qgs Gate-Source Charge --- 6 --- Qgd Gate-Drain Charge --- 9.9 --- VDS=50V , VGS=10V , ID=3A uA nC --- 5.5 21.6 Rise Time VDD=30V , VGS=10V , RG=6Ω --- 27 48.6 Turn-Off Delay Time ID=1A ,RL=30Ω. --- 56 112 Fall Time --- 24 48 Ciss Input Capacitance --- 1160 1500 Coss Output Capacitance --- 90 --- Crss Reverse Transfer Capacitance --- 45 --- Min. Typ. Max. Unit --- --- mJ Min. Typ. Max. Unit --- --- 4.0 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=12A 30 Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=4A , TJ=25℃ IF=6A , dI/dt=100A/µs , TJ=25℃ --- --- 24 A --- --- 1.3 V --- 31 --- nS --- 50 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t