WSK140N08

WSK140N08 N-Ch MOSFET Product Summery General Description The WSK140N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 80V 4.8mΩ 140A Applications Power Management for Inverter Systems. Features TO-263-2L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 140 A TC=25°C 551** A TC=25°C 140 TC=100°C 91 TC=25°C 250 TC=100°C 125 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 0.61 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 762*** mJ Note Note： ： * Repetitive rating ; pulse width limiited by junction temperatur ** Drain current is limited by junction temperature *** VD=64V www.winsok.tw Page 1 Rev 1: May.2019 WSK140N08 N-Ch MOSFET Electrical Characteristics Symbol (TC = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - - 1 - - 10 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250µA VDS=80V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=70A - 4.8 6.0 mΩ ISD=70 A, VGS=0V - 0.8 1.2 V - 30 - ns - 52 - nC - 1.6 - Ω - 4687 - - 665 - - 235 - - 26 - - 17 - - 41 - - 53 - - 115 - - 15 - - 44 - Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=70A, dlSD/dt=100A/µs Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=40V, R G=6 Ω, I DS =70A, V GS=10V, Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=64V, VGS=10V, IDS=70A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Rev 1: May.2019 WSK140N08 N-Ch MOSFET Typical Operating Characteristics Drain-Source On Resistance Output Characteristics 240 6.5 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 210 ID - Drain Current (A) 180 150 5V 120 4.5V 90 4V 60 30 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 5.0 4.5 4.0 3.5 3.0 6.0 VGS=10V 5.5 0 40 VDS - Drain - Source Voltage (V) 80 120 160 200 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 14 IDS=70A 1.6 IDS =250µA Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 12 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 0.4 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 3 Rev 1: May.2019 WSK140N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 200 2.4 100 IDS = 70A 2.0 o 1.8 IS - Source Current (A) Normalized On Resistance 2.2 VGS = 10V 1.6 1.4 1.2 1.0 0.8 10 o Tj=25 C 1 0.6 0.4 o RON@Tj=25 C: 4.8mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge VDS= 64V 9 VGS - Gate-source Voltage (V) 9000 7500 6000 Ciss 4500 3000 Coss 1500 8 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS= 70A 1 Crss 0 1.4 10 Frequency=1MHz 10500 0 0.2 Tj - Junction Temperature (°C) 12000 C - Capacitance (pF) Tj=175 C 0 25 50 75 100 125 QG - Gate Charge (nC) Page 4 Rev 1: May.2019 WSK140N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain Current Power Dissipation 280 180 160 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 limited by package 140 120 100 80 60 40 20 40 o TC=25 C,VG=10V o TC=25 C 0 0 20 40 0 60 0 20 40 60 80 100 120 140 160 180 200 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100us on )L im it 100 ds ( 1ms R ID - Drain Current (A) 1000 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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