WSG03N10

WSG03N10 N-Ch MOSFET General Description Product Summery The WSG03N10 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 100V 90mΩ 4.8A Applications The WSG03N10 meet the RoHS and Green Product requirement with full function reliability approved. Power Management in TV Inverter. SOT-223 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 4.8 A 1 3.4 A 16 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 3.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 70 ℃/W --- 30 ℃/W Rev1.0 May.2019 WSG03N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=4A VGS=4.5V , ID=3.5A Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 90 100 mΩ --- 100 150 mΩ 1 2 3 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (10V) --- 16 23 Qgs Gate-Source Charge --- 2.5 --- --- 3 --20 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Qgd VGS=VDS , ID =250uA VDS=30V , VGS=10V , ID=4A Gate-Drain Charge --- 11 Rise Time VDD=30V , VGEN=10V , RG=6Ω --- 6 11 Turn-Off Delay Time ID=1A ,RL=30Ω --- 27 49 Fall Time --- 5 10 Ciss Input Capacitance --- 740 960 Coss Output Capacitance --- 47 --- Crss Reverse Transfer Capacitance --- 25 --- Min. Typ. Max. Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=3A , TJ=25℃ IF=3A,dI/dt=100A/µs , TJ=25℃ Unit --- --- 3 A --- --- 16 A --- --- 1.3 V --- 27 --- nS --- 36 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.0 May.2019 WSG03N10 N-Ch MOSFET Typical Characteristics 96 15 VGS=10V VGS=7V 12 94 VGS=5V VGS=4.5V RDSON (mΩ) ID Drain Current (A) ID=4A 9 92 VGS=3V 6 90 3 88 0 0 0.5 1 1.5 2 4 2.5 6 VDS , Drain-to-Source Voltage (V) VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 VDS=30V ID=4A IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 0.2 2.0 1.5 1.0 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized RDSON vs. TJ Page 3 Rev1.0 May.2019 WSG03N10 N-Ch MOSFET 10000 10.00 F=1.0MHz 100us 1ms 1000 1.00 10ms ID (A) Capacitance (pF) Ciss 100 o Crss TA=25 C Single Pulse 10 1 5 9 13 17 21 100ms 0.10 Coss 25 VDS , Drain to Source Voltage (V) 0.01 0.01 0.1 Fig.7 Capacitance DC 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Rev1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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