WSF80N06H

WSF80N06H N-Ch MOSFET General Description Product Summery WSF80N06H use advanced VD MOST technology to provide low RDS(ON), low gate charge, fast switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors BVDSS RDSON ID 60V 8.0mΩ 70A Applications • Load switch. • Battery protection. • Uninterruptible power supply. Features TO-252 Pin Configuration •Advanced high cell density Trench technology •Green Device Available •Excellent Cdv/dt effect decline •Super Low Gate Charge Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 70 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 36 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 10.2 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 9.5 A IDM Pulsed Drain Current2 100 A EAS Single Pulse Avalanche Energy3 72.2 mJ IAS Avalanche Current 38 A PD@TC=25℃ Total Power Dissipation4 52 W PD@TA=25℃ Total Power Dissipation4 2 W Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.4 ℃/W TSTG www.winsok.tw Page 1 Rev 2: Apr.2019 WSF80N06H N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Parameter Symbol BVDSS △BVDSS/△TJ RDS(ON) Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 65 --- V BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.052 --- V/℃ Static Drain-Source On-Resistance2 VGS=10V , ID=8A --- 8.0 10 mΩ 2.0 2.9 4.0 V --- -5.76 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS VGS=VDS , ID =250uA uA Drain-Source Leakage Current Gate-Source Leakage Current VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 42 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 --- Ω Qg Total Gate Charge (4.5V) --- 28.7 --- --- 10.5 --- IGSS Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 9.9 --- Turn-On Delay Time --- 10.4 --- Rise Time --- 9.2 --- Turn-Off Delay Time --- 63 --- --- 4.8 --- Td(on) Tr Td(off) Tf Fall Time VDS=48V , VGS=4.5V , ID=15A VDD=30V , VGS=10V , RG=3.3 Ω, ID=15A nC ns Ciss Input Capacitance --- 3240 --- Coss Output Capacitance --- 210 --- Crss Reverse Transfer Capacitance --- 146 --- IS Continuous Source Current1,5 --- --- 47 A --- --- 100 A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current pF ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time --- 18 --- nS Qrr Reverse Recovery Charge IF=15A , dI/dt=100A/µs , TJ=25℃ --- 14 --- nC Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =25V,VGS =10V,L=0.1mH,I AS =38A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSF80N06H N-Ch MOSFET Typical Characteristics 125 11 VGS=10V ID Drain Current (A) 100 VGS=7V VGS=5V 75 10 VGS=4.5V 9 50 VGS=3V 8 25 0 0 1 2 3 7 4 VDS , Drain-to-Source Voltage (V) Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics 12 IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1 0.5 1.5 1.0 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Rev 2: Apr.2019 WSF80N06H N-Ch MOSFET 10000 F=1.0MHz 1000 Coss 100 Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area 1 Norm aliz ed Thermal Res ponse (RθJC) Capacitance (pF) Ciss DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 2: Apr.2019 Attention 1, Any and all Winsok power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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