WSR4N65F

WSR4N65F N-Ch MOSFET General Description Product Summery The WSR4N65F is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 650V 2.6Ω 4A Applications The WSR4N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z AC/DC Power Conversion in Switched Mode Power Supplies (SMPS). z Uninterruptible Power Supply(UPS) Features z Adapter. z Advanced high cell density Trench technology TO-220F Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±30 V 1.5 4 A 1.5 2.5 A 16 A 128 mJ 39 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1.2.5 Pulsed Drain Current 1 Single Pulse Avalanche Energy 1,5 PD Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 65 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.2 ℃/W www.winsok.tw Typ. Page 1 Rev 1: May.2019 WSR4N65F N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Typ. Max. Unit 650 --- --- V --- 0.6 --- V/℃ 2.6 3.0 Ω 2.0 3.0 4.0 V --- -4.57 --- mV/℃ VDS=650V , VGS=0V , TJ=25℃ --- --- 1 VDS=520V , VGS=0V , TJ=55℃ --- --- 10 VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. Reference to 25℃ , ID=250uA 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V , ID=3.5A VGS=VDS , ID =250uA --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=40V , ID=3.5A --- 5 --- S Qg Total Gate Charge (10V) --- 10.2 --- Qgs Gate-Source Charge --- 2.3 --- Qgd Td(on) VDS=520V , VGS=10V , ID=7A Gate-Drain Charge --- 2.1 --- Turn-On Delay Time --- 15.5 --- uA nC Rise Time VDD=300V , VGS=10V , --- 13 --- Turn-Off Delay Time RG=25Ω, ID=10A. --- 40 --- Fall Time --- 16 --- Ciss Input Capacitance --- 550 --- Coss Output Capacitance --- 46 --- Crss Reverse Transfer Capacitance --- 2.3 --- Min. Typ. Max. Unit --- --- 4 A --- --- 16 A --- --- 1.4 V --- 454 --- nS --- 2076 --- nC Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,2,5 1,2 Pulsed Source Current 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=7A , TJ=25℃ IF=7A , dI/dt=40A/µs , TJ=25℃ Notes: Note Note Note Note Note 1：limited by maximum junction temperature. 2：Bond wire current limit. 3：VDS=520V, ID=4A. 4：ID=0.5A, VDD=50V, Tj=25°C. 5：Repetitive Rating : Pulse width limited by maximum junction temperature. www.winsok.tw Page 2 Rev 1: May.2019 WSR4N65F N-Ch MOSFET Typical Characteristics Figure 1 Output Characteristics Figure 3 Rdson-ID Characteristics Figure 4 Body diode Characteristics Figure 2 Transfer Characteristics www.winsok.tw Page 3 Rev 1: May.2019 WSR4N65F N-Ch MOSFET Typical Characteristics Figure 5 Rdson- Tj Relation Figure 6 BVDSS vs Junction Temperature Figure 8 VGS vs QG Characteristics Figure 7 Capacitance vs Vds www.winsok.tw Page 4 Rev 1: May.2019 WSR4N65F N-Ch MOSFET Typical Characteristics Figure 9 Safe Operation Area Figure 10 Maximum current attenuation Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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