WSF30100D

WSF30100D N-Ch MOSFET General Description Product Summery The WSF30100D is the highest performance trench N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF30100D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 3.6mΩ 100A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Application Features TO-252 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current, VGS @ 10V TC=25℃ 100 A Continuous Drain Current, VGS @ 10V TC=100℃ 59 A IDM Pulsed Drain Current note1 360 A EAS Single Pulsed Avalanche Energy note2 95 mJ IAS Avalanche Current 19.5 A PD Total Power Dissipation4 TC=25℃ 68 W Thermal Resistance Junction-ambient 1 (Steady State) 62 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W 2.2 ℃/W -55 to +175 ℃ RθJA RθJC TJ, TSTG Thermal Resistance, Junction to Case Operating and Storage Temperature Range www.winsok.tw Page 1 Rev 1: May.2020 WSF30100D N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol V(BR)DSS Parameter Test Condition Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Min. Typ. Max. Units VGS=0V, ID=250μA 30 32 - V Reference to 25℃, ID=1mA --- 0.028 --- V/℃ VDS= VGS, ID=250μA 1.0 1.6 2.5 V VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source on-Resistance note3 VGS =10V, ID =30A - 3.6 4.5 mΩ RDS(on) Static Drain-Source on-Resistance note3 VGS =4.5V, ID =20A - 6.7 9.5 mΩ IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±20V - - ±100 nA - 2100 - pF - 326 - pF Ciss Input Capacitance VDS =15V, VGS =0V, f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance - 282 - pF Qg Total Gate Charge - 45 - nC Qgs Gate-Source Charge - 3 - nC Qgd Gate-Drain(“Miller”) Charge - 15 - nC td(on) Turn-on Delay Time - 21 - ns tr Turn-on Rise Time - 32 - ns td(off) Turn-off Delay Time - 59 - ns VDS =15V, ID =30A, VGS =10V VDS=15V, ID=30A, RGEN=3Ω, VGS =10V tf Turn-off Fall Time - 34 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 90 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 360 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 15 - ns - 4 - nC trr VGS = 0V, IS=30A Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/μs Qrr Body Diode Reverse Recovery Charge Notes: 1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2、The test condition is, VDD =15V, VG =10V, RG =25Ω, L=0.5mH, IAS =19.5A 3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 4、The power dissipation is limited by 150℃ junction temperature www.winsok.tw Page 2 Rev 1: May.2020 WSF30100D N-Ch MOSFET Typical Characteristics Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics Figure 5: Gate Charge Characteristics www.winsok.tw Figure 6: Capacitance Characteristics Page 3 Rev 1: May.2020 WSF30100D N-Ch MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 9: Maximum Safe Operating Area vs. Case Temperature Figure 8: Normalized on Resistance vs Junction Temperature Figure 10: Maximum Continuous Drain Current Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case www.winsok.tw Page 4 Rev 1: May.2020 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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