WST3034

WST3034 N-Ch MOSFET General Description Product Summery The WST3034 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 22mΩ 6.9A Applications The WST3034 meet the RoHS and Green Product requirement with full function z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. ESD:2KV reliability approved. Features SOT-23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 1 6.9 A 1 4.9 A 20 A Total Power Dissipation 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 150 ℃/W --- 70 ℃/W Rev 1: May.2019 WST3034 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=4.5V , ID=6.2A --- 20 24 VGS=2.5V , ID=5.2A --- 26 32 0.5 0.7 1.5 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 --- ±100 nA VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- gfs Forward Transconductance VDS=5V , ID=5A --- 18 --- S --- 1.5 3 Ω --- 12 17 --- 1.4 2.0 Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.3 3.2 Turn-On Delay Time --- 5 10 Td(on) VDS=10V , VGS=4.5V , ID=6.2A uA nC Rise Time VDD=10V , VGEN=4.5V , RG=6Ω --- 9 17 Turn-Off Delay Time ID=5A,RL=10Ω --- 25 46 Fall Time --- 5 10 Ciss Input Capacitance --- 600 800 Coss Output Capacitance --- 135 180 --- 125 175 Min. Typ. Max. Unit --- --- 1.4 A --- --- 20 A --- --- 1.3 V --- 16 --- nS --- 10 --- nC Tr Td(off) Tf Crss VDS=10V , VGS=0V , f=1MHz Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,4 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=6.2A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WST3034 N-Ch MOSFET Typical Characteristics 58 20 ID=6.2A VGS=5V 53 16 VGS=4.5V 14 VGS=3V 48 43 RDSON (mΩ) ID Drain Current (A) 18 VGS=2.5V 12 38 10 8 33 VGS=1.8V 6 28 4 23 2 18 0 0 0.25 0.5 0.75 0 1 2 4 VDS , Drain-to-Source Voltage (V) VGS (V) 6 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 7 VDS=10V ID=6.2A IS Source Current(A) 6 5 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) Fig.3 1 Fig.4 Gate-Charge Characteristics Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 150 Rev 1: May.2019 WST3034 N-Ch MOSFET 1000 100.00 100us 10.00 1ms 200 ID (A) Capacitance (pF) Ciss 1.00 Coss 10ms Crss 100ms 0.10 DC o TA=25 C Single Pulse F=1.0MHz 10 0 5 10 15 20 VDS , Drain to Source Voltage (V) 0.01 0.01 Fig.7 Capacitance 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Rev 1: May.2019