WST2314

WST2314 N-Channel MOSFET General Description Product Summery The WST2314 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 26mΩ 5.5A Applications The WST2314 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 1 5.5 A 1 4.5 A 20 A Total Power Dissipation 1.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ID@TC=25℃ ID@TC=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 125 ℃/W --- 85 ℃/W Rev:1.0 May.2019 WST2314 N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=4.5V , ID=4A --- 26 32 VGS=2.5V , ID=3A --- 40 48 0.5 0.7 1.4 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 18 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω --- 9.5 13 --- 1.6 2.0 Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.0 3.8 Turn-On Delay Time --- 3.3 8.2 Td(on) VDS=15V , VGS=4.5V , ID=5A uA nC Rise Time VDD=10V , VGS=4.5V , --- 4.6 10 Turn-Off Delay Time RG=6.0Ω ID=5A --- 25 42 Fall Time --- 4.0 7.2 Ciss Input Capacitance --- 854 1045 Coss Output Capacitance --- 95 102 Crss Reverse Transfer Capacitance --- 69 78 Min. Typ. Max. Unit --- --- 5.5 A --- --- 20 A --- --- 1.2 V --- 14.5 25 nS --- 8.4 14 nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,4 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t