CH3D08065G

CH3D08065G Silicon Carbide Schottky Diode Features 650 V IF ( TC≤135℃) = 11 A = 22 nC VRRM QC = Package  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits TO-263-2  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking CH3D08065G TO-263-2 CH3D08065G Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ DC Blocking Voltage 650 V TC = 25℃ Forward Current 24 11 8 A TC ≤ 25℃ TC ≤ 135℃ VR IF TC ≤ 153 ℃ IFSM Non-Repetitive Forward Surge Current 72 A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation 107 W TC = 25℃ TC Maximum Case Temperature 153 ℃ -55 to 175 ℃ TJ, TSTG Operating Junction and Storage Temperature 1 WS3A008065J Version 2.0 Note Fig.3 Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.4 1.65 1.7 2.3 1 20 5 100 Unit V µA 520 C Total Capacitance 50 Total Capacitive Charge 22 IF = 8A, TJ = 25℃ Note Fig.1 IF = 8A, TJ = 175℃ VR = 650V, TJ = 25℃ VR = 650V, TJ = 175℃ Fig.2 VR = 0V, TJ = 25℃, f = 1MHz / pF VR = 200V, TJ = 25℃, f = 1MHz Fig.5 VR = 400V, TJ = 25℃, f = 1MHz 41 QC Test Conditions / nC VR = 650V, IF = 8A di/dt = 200A/µs, TJ = 25℃ Fig.4 Thermal Characteristics Symbol Parameter Typ. Unit Note Fig.6 RθJC Thermal Resistance from Junction to Case 1.4 ℃/W RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ IF (A) IR (μA) Typical Performance VF (V) VR (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 WS3A008065J Version 2.0 QC (nC) PTot (W) Typical Performance VR (V) TC (℃) Figure 4. Total Capacitive Charge vs. Reverse Voltage C (pF) Thermal Resistance（℃/W） Figure 3. Power Derating VR (V) T(sec) Figure 5. Total Capacitance vs. Reverse Voltage Figure 6. Transient Thermal Impedance 3 WS3A008065J Version 2.0 Package Dimensions Package TO-263-2 Symbol Min. (mm) Typ. (mm) Max. (mm) A 9.9 10.1 10.3 B 9.90 10.1 10.3 C 8.50 8.7 8.90 D 4.85 5.05 5.25 E 3.00 3.2 3.40 F 1.05 1.25 1.45 G 0.60 0.8 1.00 H 2.34 2.54 2.74 I 4.40 4.6 4.80 J 2.40 2.6 2.80 K 2.55 1.75 2.95 Simplified Diode Model Equivalent IV Curve for Model Mathematical Equation VF=Vt + IF×Rdiff IF=f（VF） Vt = -0.001×Tj + 0.9674 [V] Rdiff = 1×10-6×Tj2 + 1×10-4×Tj + 0.0543 [Ω] Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C IF= Forward Current Less than 16A