CH3D04065A

VRRM CH3D04065A Silicon Carbide Schottky Diode Features 650 V IF ( TC≤135℃) = 6 A = 9 nC QC = Package  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits TO-220-2  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking CH3D04065A TO-220-2 CH3D04065A Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ DC Blocking Voltage 650 V TC = 25℃ Forward Current 13 6 4 A TC ≤ 25℃ TC ≤ 135℃ VR IF TC ≤ 155℃ IFSM Non-Repetitive Forward Surge Current 40 A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation 51 W TC = 25℃ TC Maximum Case Temperature 155 ℃ -55 to 175 ℃ 1 Nm TJ,TSTG Operating Junction and Storage Temperature TO-220 Mounting Torque Note 1 M3 Screw Fig.3 Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.4 1.65 1.7 2.3 1 10 5 100 Unit V µA 230 C Total Capacitance 24 Total Capacitive Charge 9 IF = 4A, TJ = 25℃ Note Fig.1 IF = 4A, TJ = 175℃ VR = 650V, TJ = 25℃ VR = 650V, TJ = 175℃ Fig.2 VR = 0V, TJ = 25℃, f = 1MHz / pF VR = 200V, TJ = 25℃, f = 1MHz Fig.5 VR = 400V, TJ = 25℃, f = 1MHz 20 QC Test Conditions / nC VR = 650V, IF = 4A di/dt = 200A/µs, TJ = 25℃ Fig.4 Thermal Characteristics Symbol Parameter Typ. Unit Note Fig.6 RθJC Thermal Resistance from Junction to Case 2.9 ℃/W RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ IF (A) IR (μA) Typical Performance VF (V) VR (V) 2 QC (nC) PTot (W) Typical Performance VR (V) TC (℃) Figure 4. Total Capacitive Charge vs. Reverse Voltage C (pF) Thermal Resistance（℃/W） Figure 3. Power Derating VR (V) T(sec) Figure 6. Transient Thermal Impedance Figure 5. Total Capacitance vs. Reverse Voltage 3 Package Dimensions Package TO-220-2 Symbol Min. (mm) Typ. (mm) Max. (mm) A 9.17 10.08 10.91 B 27.00 28.58 30.00 C 3.89 4.50 5.00 D 4.20 5.10 5.80 E 11.70 13.30 14.97 F 0.50 0.80 1.21 Simplified Diode Model Equivalent IV Curve for Model Mathematical Equation VF=Vt + IF×Rdiff IF=f（VF） Vt = -0.0011×Tj + 0.99 [V] Rdiff = 1.83×10-6×Tj2 + 2.52×10-4×Tj + 0.099 [Ω] Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C IF= Forward Current Less than 8A 4