WST3400A

WST3400A N-Ch MOSFET Product Summery General Description The WST3400A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON 30V 20mΩ ID 6.4A Applications The WST3400A meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID@Tc=25℃ ID@Tc=70℃ IDM PD@TA=25℃ 10s Units 1 7.7 6.4 A 1 6.2 5.4 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Steady State 2 A 23 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Thermal Resistance Junction-ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Rev:1.0 May.2019 WST3400A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.025 --- V/℃ VGS=4.5V , ID=5A --- 20 31 VGS=2.5V , ID=4A --- 28 46 0.5 0.8 1.2 V --- -4.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 5.8 8.4 Qgs Gate-Source Charge --- 2.4 3.5 Qgd Gate-Drain Charge --- 2.0 2.9 Td(on) VDS=15V , VGS=4.5V , ID=5A --- 2.3 4.8 Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 7.6 14 Turn-Off Delay Time ID=5A --- 21 44 Fall Time --- 3.8 8 Ciss Input Capacitance --- 520 880 Coss Output Capacitance --- 72 112 Crss Reverse Transfer Capacitance --- 56 91 Min. Typ. Max. Unit --- --- 1.8 A --- --- 22 A --- --- 1.2 V --- 18 --- nS --- 3 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t