WST05N10L

WST05N10L N-Ch MOSFET General Description Product Summery The WST05N10L is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 100V 120mΩ 3.0A Applications The WST05N10L meet the RoHS and Green Product requirement with full function reliability approved. z Battery protection z Uninterruptible power supply z Load Switch Features z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@Tc=25℃ Continuous Drain Current, VGS @ 10V 3.0 A ID@Tc=70℃ Continuous Drain Current, VGS @ 10V 2.1 A IDM Pulsed Drain Current 18 A PD@Tc=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 300 ℃/W RθJC Thermal Resistance Junction-Case --- 150 ℃/W www.winsok.tw Page 1 Rev:1.0 May.2019 WST05N10L N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit 100 --- --- V = VGS=10V , ID 3A --- 120 145 = VGS=4.5V , ID 3A --- 145 170 BVDSS Drain-Source Breakdown Voltage = VGS=0V , ID 250uA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 1.2 1.7 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA mΩ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance --- 5 --- S Qg Total Gate Charge (10V) --- 20.5 --- Qgs Gate-Source Charge --- 2.1 --- Qgd Gate-Drain Charge --- 3.3 --- --- 6 --- VDD=50V, RL=19Ω --- 4 --- VGS=10V,RG=3Ω --- 20 --- --- 4 --- --- 650 --- --- 25 --- --- 20 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 3.0 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Td(on) Tr Td(off) Tf Ciss = VDS=5V , ID 3A VDS=50V,ID=3A, VGS=10V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance VDS=50V,VGS=0V, Coss Output Capacitance Crss Reverse Transfer Capacitance F=1.0MHz nC ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current 2 Diode Forward Voltage Conditions Notes: 1、Repetitive Rating: Pulse width limited by maximum junction temperature. 2、Surface Mounted on FR4 Board, t ≤ 10 sec. 3、Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4、Guaranteed by design, not subject to productio www.winsok.tw Page 2 Rev:1.0 May.2019 WST05N10L N-Ch MOSFET Typical Characteristics Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics ID- Drain Current (A) Figure 3 Rdson- Drain Current www.winsok.tw Qg Gate Charge (nC) Figure 5 Gate Charge Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 3 Rev:1.0 May.2019 WST05N10L N-Ch MOSFET Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 10 Power De-rating Figure 8 Safe Operation Area Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Rev:1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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