HFF13N50

HFF13N50 500V N-Channel MOSFETs withstand high energy pulse in the avalanche and  Features  500V,13A, RDS(ON) =0.38Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available commutation mode. These devices are well suited for high efficiency fast switching applications.  Product Summary  Applications  Networking  Load Switch  LED applications  Quick Charger  General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS BVDSS 500V technology. This advanced technology has been RDSON 0.38ohm ID 13A especially tailored to minimize on-state resistance, provide superior switching performance, and  Absolute Maximum Ratings Tc =25℃ unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V ID@Tc=25℃ 13 A ID@Tc=100℃ 8.5 A IDM 55 A Single Pulse Avalanche Energy EAS 900 mJ Single Pulse Avalanche Current IAS 20 A Power Dissipation- Derate above 25℃ 0.31 W/℃ Power Dissipation TC=25℃ 50 TJ -55 to 150 W ℃ TSTG -55 to 150 ℃ Continuous Drain Current Pulsed Drain Current Operating Junction Temperature Storage Temperature  Thermal Resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC --- --- 2.6 ℃/W Thermal Resistance Junction to ambient RthJA --- --- 62 ℃/W Soldering temperature, wave soldering for 10s Tsold --- --- 265 ℃ 1 HFF13N50 500V N-Channel MOSFETs  Electronic Characteristics TJ =25℃ unless otherwise noted Off Characteristics Parameter Condition Drain-Source Breakdown Voltage VGS =0V, ID =250uA Drain-Source Leakage Current Gate- Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 500 550 --- V --- --- 1 --- --- 10 IGSS --- --- ±100 nA Symbol Min. Typ. Max. Unit VDS=500V, VGS =0V IDSS VDS=400V, VGS =0V VGS=±30V, VDS =0V uA On Characteristics Parameter Condition Static Drain-source On Resistance VGS=10V, ID=6.5A RDS(ON) --- 0.34 0.38 Ω Gate Threshold Voltage VGS =VDS, ID=250uA 2.0 3.0 4.0 V Forward Transconductance VDS =15V, ID=6.5A VGS(TH) gFS --- 13 --- S Symbol Min. Typ. Max. Unit Dynamic and switching Characteristics Parameter Condition Total Gate Charge VDS=400V Qg --- 35 --- Gate-Source Charge VGS=10V Qgs --- 8.6 --- Gate-Drain Charge ID=10A Qgd --- 15 --- Turn-On Delay Time VDD=300V Td(on) --- 30 --- Rise Time VGS=10V Tr --- 21 --- Turn-Off Delay Time RG=25Ω Td(off) --- 70 --- Fall Time ID=10A Tf --- 40 --- Input capacitance VDS=25V Ciss --- 1800 --- Output capacitance VGS=0V Coss --- 160 --- Reverse transfer capacitance F=1MHz Crss --- 10 --- Gate resistance VDS=0V,VGS=0V,F=1MHz Rg --- 1.2 2.4 Ω Symbol Min. Typ. Max. Unit nC ns F P Drain-Source Diode Characteristics and Maximum Ratings Parameter Condition Diode Forward Voltage VGS=0V,IS=10A VSD --- 0.72 1.4 V Reverse Recovery Time IF=10A, dI/dt=40A/μs, VDS=100V trr --- 502 --- nS Qrr --- 4800 --- nC Reverse Recovery Charge Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=500V, VGS=10V, L=10mH,IAS=10A.,RG=25 ,Starting TJ=25℃. 3. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 4. Essentially independent of operating temperature. 2 HFF13N50 TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.2 TJ , Junction Temperature (℃) Normalized Vth vs. TJ Fig.4 Fig.5 Qg , Gate Charge (nC) Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 Normalized On Resistance () ID , Continuous Drain Current (A) 500V N-Channel MOSFETs Square Wave Pulse Duration (s) Normalized Transient Impedance Fig.6 3 VDS , Drain to Source Voltage (V) Maximum Safe Operation Area HFF13N50 500V N-Channel MOSFETs VDS EAS= 90% Td(on) Tr Ton Fig.7 Td(off) L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS 1 Tf VGS Toff Switching Time Waveform Fig.8 4 EAS Waveform HFF13N50 500V N-Channel MOSFETs TO220F PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.460 9.860 0.412 0.388 A1 7.100 6.900 0.280 0.272 A2 3.500 3.100 0.138 0.122 A3 9.900 9.500 0.390 0.374 B1 16.170 15.570 0.637 0.613 B2 4.900 4.500 0.193 0.177 B3 6.880 6.480 0.271 0.255 C 3.500 3.100 0.138 0.122 C1 12.870 12.270 0.507 0.483 C2 13.380 12.580 0.527 0.495 D 2.590 2.490 0.102 0.098 D1 1.470 1.070 0.058 0.042 D2 0.900 0.700 0.035 0.028 E1 2.740 2.340 0.108 0.092 E3 0.600 0.400 0.024 0.016 E4 2.960 2.560 0.117 0.101 DIA Φ1.5 TYP. deep0.1 TYP. Φ0.059 TYP. deep0.004 TYP. 5