HFF10N65

HFF10N65 650V N-Channel MOSFETs withstand high energy pulse in the avalanche and  Features  650V,10A, RDS(ON) =0.8Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available commutation mode. These devices are well suited for high efficiency fast switching applications.  Product Summary  Applications  Networking  Load Switch  LED applications  Quick Charger  General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS BVDSS 650V technology. This advanced technology has been RDSON 0.8ohm ID 10A especially tailored to minimize on-state resistance, provide superior switching performance, and  Absolute Maximum Ratings Tc =25℃ unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V ID@Tc=25℃ 10 A ID@Tc=100℃ 6.3 A IDM 40 A Single Pulse Avalanche Energy EAS 500 mJ Single Pulse Avalanche Current IAS 10 A Power Dissipation- Derate above 25℃ 0.31 W/℃ Power Dissipation TC=25℃ 125 TJ -55 to 150 W ℃ TSTG -55 to 150 ℃ Continuous Drain Current Pulsed Drain Current Operating Junction Temperature Storage Temperature  Thermal Resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC --- --- 0.8 ℃/W Thermal Resistance Junction to ambient RthJA --- --- 65 ℃/W Soldering temperature, wave soldering for 10s Tsold --- --- 265 ℃ 1 HFF10N65 650V N-Channel MOSFETs  Electronic Characteristics TJ =25℃ unless otherwise noted Off Characteristics Parameter Condition Drain-Source Breakdown Voltage VGS =0V, ID =250uA Drain-Source Leakage Current Gate- Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 650 700 --- V --- --- 1 --- --- 10 IGSS --- --- ±100 nA Symbol Min. Typ. Max. Unit VDS=650V, VGS =0V IDSS VDS=520V, VGS =0V VGS=±30V, VDS =0V uA On Characteristics Parameter Condition Static Drain-source On Resistance VGS=10V, ID=5A RDS(ON) --- 0.75 0.8 Ω Gate Threshold Voltage VGS =VDS, ID=250uA 2.0 3.0 4.0 V Forward Transconductance VDS =40V, ID=10A VGS(TH) gFS --- 2.5 --- S Symbol Min. Typ. Max. Unit Dynamic and switching Characteristics Parameter Condition Total Gate Charge VDS=520V Qg --- 21 --- Gate-Source Charge VGS=10V Qgs --- 7.5 --- Gate-Drain Charge ID=10A Qgd --- 6 --- Turn-On Delay Time VDD=300V Td(on) --- 38 --- Rise Time VGS=10V Tr --- 70 --- Turn-Off Delay Time RG=25Ω Td(off) --- 53 --- Fall Time ID=10A Tf --- 35 --- Input capacitance VDS=25V Ciss --- 1120 --- Output capacitance VGS=0V Coss --- 130 --- Reverse transfer capacitance F=1MHz Crss --- 4.9 --- Gate resistance VDS=0V,VGS=0V,F=1MHz Rg --- 1.2 2.4 Ω Symbol Min. Typ. Max. Unit nC ns F P Drain-Source Diode Characteristics and Maximum Ratings Parameter Condition Diode Forward Voltage VGS=0V,IS=10A VSD --- 0.72 1.4 V Reverse Recovery Time IF=10A, dI/dt=40A/μs, VDS=100V trr --- 491 --- nS Qrr --- 2296 --- nC Reverse Recovery Charge Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=650V, VGS=10V, L=1mH,IAS=10A.,RG=25 ,Starting TJ=25℃. 3. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 4. Essentially independent of operating temperature. 2 HFF10N65 650V N-Channel MOSFETs ID , Continuous Drain Current (A) N or m al iz ed O n R es is ta nc e  TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.2 TJ , Junction Temperature (℃) Normalized Vth vs. TJ Fig.4 Qg , Gate Charge (nC) Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance 3 HFF10N65 650V N-Channel MOSFETs VDS EAS= 90% Td(on) Tr Ton Fig.7 Td(off) LxI 2 AS 2 x BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS 1 Tf Toff VGS Switching Time Waveform Fig.8 4 EAS Waveform HFF10N65 650V N-Channel MOSFETs TO220F PACKAGE INFORMATION Symbol A A1 A2 B1 B2 B3 C C1 C2 D D1 D2 K E1 E3 E4 DIA Dimensions In Millimeters Min Max 9.860 10.460 6.900 7.100 3.100 3.500 9.500 9.900 4.500 4.900 6.480 6.880 3.100 3.500 12.270 12.870 12.580 13.380 2.490 2.590 1.070 1.470 0.700 0.900 2.900 3.300 2.340 2.740 0.400 0.600 2.560 2.960 1.45 1.55 5 Dimensions In Inches Min Max 0.389 0.411 0.272 0.279 0.123 0.137 0.375 0.389 0.178 0.192 0.256 0.271 0.123 0.137 0.484 0.506 0.496 0.526 0.099 0.101 0.043 0.057 0.028 0.035 0.115 0.129 0.093 0.107 0.016 0.023 0.101 0.116 0.058 0.061