HFF20N65

HFF20N65 650V N-Channel MOSFETs withstand high energy pulse in the avalanche and  Features  650V,20A, RDS(ON) =0.35Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available commutation mode. These devices are well suited for high efficiency fast switching applications.  Product Summary  Applications  Networking  Load Switch  LED applications  Quick Charger  General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS BVDSS 650V technology. This advanced technology has been RDSON 0.35ohm ID 20A especially tailored to minimize on-state resistance, provide superior switching performance, and  Absolute Maximum Ratings Tc =25℃ unless otherwise noted Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V ID@Tc=25℃ 20 A ID@Tc=100℃ 12.5 A IDM 80 A Single Pulse Avalanche Energy EAS 1300 mJ Single Pulse Avalanche Current IAS 20 A Power Dissipation- Derate above 25℃ 0.31 W/℃ Power Dissipation TC=25℃ 45 TJ -55 to 150 W ℃ TSTG -55 to 150 ℃ Continuous Drain Current Pulsed Drain Current Operating Junction Temperature Storage Temperature  Thermal Resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC --- --- 2.6 ℃/W Thermal Resistance Junction to ambient RthJA --- --- 65 ℃/W Soldering temperature, wave soldering for 10s Tsold --- --- 265 ℃ 1 HFF20N65 650V N-Channel MOSFETs  Electronic Characteristics TJ =25℃ unless otherwise noted Off Characteristics Parameter Condition Drain-Source Breakdown Voltage VGS =0V, ID =250uA Drain-Source Leakage Current Gate- Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 650 700 --- V --- --- 1 --- --- 10 IGSS --- --- ±100 nA Symbol Min. Typ. Max. Unit VDS=650V, VGS =0V IDSS VDS=520V, VGS =0V VGS=±30V, VDS =0V uA On Characteristics Parameter Condition Static Drain-source On Resistance VGS=10V, ID=5A RDS(ON) --- 0.3 0.35 Ω Gate Threshold Voltage VGS =VDS, ID=250uA 2.0 3.0 4.0 V Forward Transconductance VDS =40V, ID=10A VGS(TH) gFS --- 3.4 --- S Symbol Min. Typ. Max. Unit Dynamic and switching Characteristics Parameter Condition Total Gate Charge VDS=400V Qg --- 58 --- Gate-Source Charge VGS=10V Qgs --- 13 --- Gate-Drain Charge ID=20A Qgd --- 23 --- Turn-On Delay Time VDD=250V Td(on) --- 36 --- Rise Time VGS=10V Tr --- 74 --- Turn-Off Delay Time RG=10Ω Td(off) --- 78 --- Fall Time ID=20A Tf --- 58 --- Input capacitance VDS=25V Ciss --- 2900 --- Output capacitance VGS=0V Coss --- 310 --- Reverse transfer capacitance F=1MHz Crss --- 20 --- Gate resistance VDS=0V,VGS=0V,F=1MHz Rg --- 2.5 --- Ω Symbol Min. Typ. Max. Unit nC ns F P Drain-Source Diode Characteristics and Maximum Ratings Parameter Condition Diode Forward Voltage VGS=0V,IS=10A VSD --- 0.7 1.4 V Reverse Recovery Time IF=10A, dI/dt=40A/μs, VDS=100V trr --- 491 --- nS Qrr --- 2296 --- nC Reverse Recovery Charge Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=650V, VGS=10V, L=1mH,IAS=10A.,RG=25 ,Starting TJ=25℃. 3. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 4. Essentially independent of operating temperature. 2 HFF20N65 650V N-Channel MOSFETs Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power dissipation vs Case Temperature Figure 4 Typical Output Characteristics Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impedance , Junction to Case 3 HFF20N65 650V N-Channel MOSFETs Figure 6 Figure 7 Typical Body Diode Transfer Characteristics TypicalTransfer Characteristics Figure 8 Typical Capacitance vs Drain to Source Voltage 4 Figure 9 Typical Gate Charge vs Gate to Source Voltage HFF20N65 650V N-Channel MOSFETs TO-220F PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.460 9.860 0.412 0.388 A1 7.100 6.900 0.280 0.272 A2 3.500 3.100 0.138 0.122 A3 9.900 9.500 0.390 0.374 B1 16.170 15.570 0.637 0.613 B2 4.900 4.500 0.193 0.177 B3 6.880 6.480 0.271 0.255 C 3.500 3.100 0.138 0.122 C1 12.870 12.270 0.507 0.483 C2 13.380 12.580 0.527 0.495 D 2.590 2.490 0.102 0.098 D1 1.470 1.070 0.058 0.042 D2 0.900 0.700 0.035 0.028 E1 2.740 2.340 0.108 0.092 E3 0.600 0.400 0.024 0.016 E4 2.960 2.560 0.117 0.101 DIA Φ1.5 TYP. deep0.1 TYP. Φ0.059 TYP. deep0.004 TYP. 5