SL3415

SL3415 P-Channel Power MOSFET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● PWM application ● Load switch Marking and pin Assignment SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG top view Limit Unit -20 V ±8 V -4 A -30 A 1.5 W -55 To 150 ℃ 357 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage www.slkormicro.com VGS=0V ID=-250μA BVDSS 1 -20 SL3415 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±10 μA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.3 -0.65 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4A - 33 50 mΩ VGS=-2.5V, ID=-4A - 45 60 mΩ VDS=-5V,ID=-4A 8 - - S - 1450 - PF - 205 - PF - 160 - PF - 9.5 nS On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω - 17 nS td(off) VGS=-4.5V,RGEN=3Ω - 94 nS - 35 nS - 17.2 nC - 1.3 - nC - 4.5 - nC - - -1 V - - -4 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.slkormicro.com 2 SL3415 Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.slkormicro.com Figure 6 Drain-Source On-Resistance 3 ID- Drain Current (A) Normalized On-Resistance SL3415 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.slkormicro.com Figure 12 Source- Drain Diode Forward 4 SL3415 SOT-23 Package Information Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 L 2.000 0.550REF L1 0.300 0.500 θ 0° 8° www.slkormicro.com 5