SL3401S
P-Channel Power MOSFET
D
General Features
G
● VDS = -30V,ID = -4A
RDS(ON) < 130mΩ @ VGS=-2.5V
RDS(ON) < 85mΩ @ VGS=-4.5V
S
RDS(ON) < 60mΩ @ VGS=-10V
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
Marking and Pin Assignment
● Load switch
● Power management
SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
(Note 1)
Drain Current-Pulsed
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
Unit
-30
V
±12
V
-4
A
-18
A
2.5
W
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
78
Min
℃/W
Typ
Max
Unit
-
V
-1
μA
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
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1
-
SL3401S
Gate-Body Leakage Current
On Characteristics
IGSS
VGS=±10V,VDS=0V
-
-
±100
nA
VGS(th)
VDS=VGS,ID=-250μA
-0.7
-1
-1.3
V
VGS=-10V, ID=-4.0A
-
45
60
mΩ
VGS=-4.5V, ID =-3.7A
-
65
85
mΩ
100
130
mΩ
-
10
-
S
-
880
-
PF
-
105
-
PF
-
65
-
PF
-
7
-
nS
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V, ID =-2A
Forward Transconductance
Dynamic Characteristics
gFS
VDS=-5V,ID=-4.0A
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-15V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V,ID=-4.0A
-
3
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
30
-
nS
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
12
-
nS
Total Gate Charge
Qg
-
8.5
-
nC
Gate-Source Charge
Qgs
-
1.8
-
nC
Gate-Drain Charge
Qgd
-
2.7
-
nC
-
-
-1.2
V
VDS=-15V,ID=-4.0A,VGS=-4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-4.0A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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SL3401S
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ID- Drain Current (A)
PD Power(W)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output Characteristics
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Figure 6 Drain-Source On-Resistance
3
ID- Drain Current (A)
Normalized On-Resistance
SL3401S
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
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Figure 12 Source- Drain Diode Forward
4
ID- Drain Current (A)
SL3401S
Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SL3401S
SOT-23 Package Information
Symbol
Dimensions in Millimeters
MIN.
MAX.
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e
e1
0.950TYP
1.800
2.000
L
0.550REF
L1
0.300
0.500
θ
0°
8°
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