SL3400

SL3400 N-Channel Power MOSFET D General Features ● VDS = 30V,ID = 5.8A G RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V S RDS(ON) < 41mΩ @ VGS=10V Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● PWM applications Marking and pin assignment ● Load switch ● Power management SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID 5.8 A IDM 30 A PD 1.4 W TJ,TSTG -55 To 150 ℃ RθJA 89 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 33 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Off Characteristics www.slkormicro.com 1 SL3400 Gate-Body Leakage Current On Characteristics IGSS VGS=±12V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250μA 0.7 0.9 1.4 V VGS=2.5V, ID=4A - 45 59 mΩ VGS=4.5V, ID=5.8A - 31 45 mΩ VGS=10V, ID=5.8A - 28 41 mΩ 10 - - S - 820 - PF - 99 - PF - 77 - PF - 9.6 - nS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics RDS(ON) gFS VDS=5V,ID=5.8A (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=15V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V, RL=2.7Ω - 4.8 - nS td(off) VGS=10V,RGEN=3Ω - 39 - nS - 4 - nS - 9.5 - nC - 1.5 - nC - 3 - nC - - 1.2 V - - 5.8 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=5.8A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=5.8A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.slkormicro.com 2 SL3400 Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit . TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics www.slkormicro.com Figure 6 Drain-Source On-Resistance 3 ID- Drain Current (A) Normalized On-Resistance SL3400 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.slkormicro.com Figure 12 Source- Drain Diode Forward 4 SL3400 SOT-23 Package Information Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° www.slkormicro.com 5